Light-emitting diode chip and method of manufacturing the same
AssigneeHon Hai Precision Industry Co., Ltd.
InventorDa-Wei Lin
Life of this patent
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Abstract
An LED chip includes a substrate and a p-n junction type semiconductor light-emitting structure. The substrate has a first surface and a second surface opposite to the second surface. The p-n junction type semiconductor light-emitting structure is arranged on the first surface of the substrate. A plurality of blind holes is defined in the second surface of the substrate and extends from the second surface towards the first surface. A heat conductive material is filled in each of the plurality of blind holes thereby forming a plurality of heat conductive poles in the plurality of blind holes.
Claims13
An LED chip, comprising:
- a substrate having a first surface and a second surface opposite to the second surface, a plurality of blind holes being defined in the second surface of the substrate and extending from the second surface towards the first surface, a heat conductive material being filled in each of the plurality of blind holes thereby forming a plurality of heat conductive poles in the plurality of blind holes;
- and
- a p-n junction type semiconductor light-emitting structure being arranged on the first surface of the substrate,
- wherein the heat conductive poles each are received in a respective blind hole and are separated from each other in a cross sectional view without connecting with each other via the heat conductive material.
A method for manufacturing an LED chip comprising:
- providing an electrically-insulating substrate which has a top surface and a bottom surface, in which a plurality of blind holes is defined in the bottom surface and a heat conductive material is filled in the blind holes to form heat conductive poles in the substrate;
- and
- providing a p-n junction type semiconductor light-emitting structure on the substrate, in which the p-n junction type semiconductor light-emitting structure comprises an n-type semiconductor layer on the substrate, an active layer on the n-type semiconductor layer and a p-type semiconductor on the active layer and in which a first electrode is formed on the n-type semiconductor layer and a second electrode is formed on the p-type semiconductor layer,
- wherein the heat conductive poles each are received in a respective blind hole and are separated from each other in a cross sectional view without connecting with each other via the heat conductive material.
Dependencies are inferred from the claim text.