Efficient light extraction method and device

A method for making an optoelectronic device, comprising:

• providing a multilayer semiconductor structure comprising a GaN layer and an active region, the active region comprising at least one quantum well layer of InGaN and GaN, wherein the electron quantum well layers and hole quantum well layer form a first quantum well stage, and wherein the active region comprises a plurality of quantum well stages adjacent to each other having the same structure as the first quantum well stage;
• and
• depositing a polystyrene microsphere array surface onto the multilayer semiconductor structure;
• depositing close-packed SiO2 microspheres onto the polystyrene microsphere array surface;
• and
• heat treating to convert the polystyrene microsphere array surface into a microlayer film to provide a surface comprising close-packed SiO2 colloidal microsphere crystals partially imposed into a polystyrene monolayer film.

A method for generating optical emission from an optoelectronic device, comprising:

• providing a GaN layer and an active region, the active region comprising at least one quantum well layer of InGaN and GaN, wherein the electron quantum well layers and hole quantum well layer form a first quantum well stage, and wherein the active region comprises a plurality of quantum well stages adjacent to each other having the same structure as the first quantum well stage;
• depositing a polystyrene microsphere array surface onto the active region;
• depositing close-packed SiO2 microspheres onto the polystyrene microsphere array surface;
• heat treating to convert the polystyrene microsphere array surface into a microlayer film to provide a surface comprising close-packed SiO2 colloidal microsphere crystals partially imposed into a polystyrene monolayer film;
• and
• exciting the active region to produce optical emission.