Use of sack geometry to implement a single qubit phase gate
AssigneeMicrosoft Corporation
InventorsParsa Bonderson, Kirill Shtengel, David Clarke, Chetan Nayak
Life of this patent
Estimating the term…
Abstract
An implementation of a single qubit phase gate for use in a quantum information processing scheme based on the υ=5/2 fractional quantum Hall (FQH) state is disclosed. Using sack geometry, a qubit consisting of two σ-quasiparticles. which may be isolated on respective antidots, may be separated by a constriction from the bulk of a two-dimensional electron gas in the υ=5/2 FQH state. An edge quasiparticle may induce a phase gate on the qubit. The number of quasiparticles that are allowed to traverse the edge path defines which gate is induced. For example, if a certain number of quasiparticles are allowed to traverse the path, then a π/8 gate may be effected.
Claims29
A method for implementing a single qubit phase gate, the method comprising:
- forming a set-off region in a bulk of two-dimensional electron gas, the set-off region defined by an edge of the electron gas;
- isolating first and second σ-quasiparticles on respective antidots formed in the set-off region;
- allowing an edge current to flow around the edge of the set-off region for an amount of time;
- and
- identifying a phase gate associated with the amount of time for which the edge current is allowed to flow around the edge of the set-off region.
A single qubit phase gate, comprising:
- a bulk of two-dimensional electron gas having an edge, a portion of the edge forming a constriction that separates a set-off region of the gas from the remainder of the bulk, wherein first and second σ-quasiparticles are disposed in the set-off region, and an edge current flows around the edge of the set-off region,
- wherein the σ-quasiparticles are isolated on respective antidots formed in the electron gas.
A method for implementing a single qubit phase gate, the method comprising:
- isolating a pair of σ-quasiparticles on respective antidots formed in a set-off region in a two-dimensional electron gas in the υ=5/2 fractional quantum Hall state, wherein the set-off region is separated from the remainder of the gas by a constriction, the electron gas in the υ=5/2 fractional quantum Hall state, and the σ-quasiparticles define a qubit;
- and
- inducing a phase gate on the qubit by allowing a number of σ-quasiparticles to traverse an edge of the set-off region.
A method for implementing a single qubit phase gate, the method comprising:
- forming a set-off region in a bulk of two-dimensional electron gas, the set-off region defined by an edge of the electron gas;
- isolating first and second σ-quasiparticles in the set-off region;
- allowing an edge current to flow around the edge of the set-off region for an amount of time;
- and
- identifying a π/8 phase gate associated with the amount of time for which the edge current is allowed to flow around the edge of the set-off region.
A single qubit phase gate, comprising:
- a bulk of two-dimensional electron gas having an edge, a portion of the edge forming a constriction that separates a set-off region of the gas from the remainder of the bulk, and
- edge-deforming means for deforming the edge of the electron gas to alter a size of the constriction,
- wherein first and second σ-quasiparticles are disposed in the set-off region, and an edge current flows around the edge of the set-off region.
Dependencies are inferred from the claim text.