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US 8,076,665 B2Granted
Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorTakuya Futatsuyama
Life of this patent
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Abstract
A semiconductor device is comprised of a semiconductor substrate, conductive layers stacked above the semiconductor substrate, which is comprised of a conductive polysilicon, and a metal layer provided above the conductive layers. Both ends of the conductive layers have stairsteps respectively. The conductive layers are connected in series by a metal layer which is provided on the stairsteps. The conductive layers connected in series comprise a resistance element.
Claims12
A semiconductor device comprising:
- a semiconductor substrate;
- conductive layers stacked above the semiconductor substrate, which is comprised of a conductive polysilicon;
- a metal layer provided above the conductive layers;
- and
- a 3-dimensional memory which includes conductive layers stacked above the semiconductor substrate, which is comprised of a conductive polysilicon,
- wherein both ends of the conductive layers have stairsteps respectively, the conductive layers are connected in series by a metal layer which is provided on the stairsteps, and the conductive layers connected in series comprises a resistance element,
- wherein the number of the conductive layers which comprises the resistance element is equal to the number of the conductive layers which comprises the 3-dimensional memory.
4 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- three or more conductive layers stacked above the semiconductor substrate, which is comprised of a conductive polysilicon;
- and
- a metal layer provided above the conductive layers,
- wherein both ends of the conductive layers have stairsteps respectively,
- wherein the odd-numbered conductive layers are connected in series by a metal layer which is provided on the stairsteps, and the odd-numbered conductive layers connected in series comprise a first electrode of a capacitance element,
- wherein the even-numbered conductive layers are connected in series by a metal layer which is provided on the stairsteps, and the even-numbered conductive layers connected in series comprise a second electrode of the capacitance element.
4 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- conductive layers stacked above the semiconductor substrate, which is comprised of a conductive polysilicon;
- and
- a metal layer provided above the conductive layers,
- wherein both ends of the conductive layers have stairsteps respectively, the conductive layers are connected in series by a metal layer which is provided on the stairsteps, and the conductive layers connected in series comprises a resistance element,
- wherein each of the conductive layers is comprised of conductive lines which are extend to the same direction, and the conductive lines are connected in series by the metal layer,
- wherein the conductive lines in the odd-numbered conductive layer form the semiconductor substrate and the conductive lines in the even-numbered conductive layer form the semiconductor substrate are shifted in a half pitch of the conductive lines in a direction perpendicular to a direction in which the conductive layers extend.
4 more elements
Dependencies are inferred from the claim text.