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US 8,076,664 B2Granted
Phase change memory with layered insulator
AssigneeIntel Corporation
InventorsSemyon D. Savransky, David L. Kencke, Ilya V. Karpov
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Abstract
A phase change memory may be formed with an insulator made up of two different layers having significantly different thermal conductivities. Pores may be formed within the stack of insulating layers and the pores may be filled with heaters, chalcogenide layers, and electrodes in some embodiments. The use of the two different insulator layers enables embodiments where thermal losses may be reduced and an amorphous region may be maintained along the entire length of the phase change material layer.
Claims10
An apparatus comprising:
- a first insulator layer;
- a second insulator layer over said first insulator layer, said second insulator layer being more thermally conductive than said first insulator layer;
- a third insulator layer under said first insulator layer, said third insulator layer being more thermally conductive than said first insulator layer;
- a pore in said third insulating layer that extends into said first and second insulating layers, said pore including a heater;
- and
- a phase change material within and surrounded by both of said first and second insulator layers
- wherein the first insulator layer is between the second insulator layer and the third insulator layer.
4 more elements
Dependencies are inferred from the claim text.