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US 8,076,260 B2Granted
Substrate structure and manufacturing method of the same
AssigneeFujitsu Semiconductor Limited
InventorDaiyu Kondo
Life of this patent
Estimating the term…
Abstract
After a titanium nitride (TiN) thin film is formed on a silicon substrate, cobalt (Co) fine particles and nickel (Ni) fine particles are deposited in a mixed state on the titanium nitride (TiN) thin film, and CNTs are sequentially grown from the cobalt (Co) fine particles and the nickel fine particles by varying growth conditions.
Claims14
A substrate structure, comprising:
- a substrate;
- a base material formed in a region above said substrate;
- a catalytic material formed in the region;
- and
- a linear structure made of a carbon element and formed on said catalytic material,
- wherein said catalytic material contains at least first catalytic fine particles made of a first catalytic material and second catalytic fine particles made of a second catalytic material different from said first catalytic material;
- and
- wherein said linear structure is formed from each of the first and second catalytic fine particles.
5 more elements
A manufacturing method of a substrate structure, comprising:
- forming a base material in a region above a substrate;
- forming a catalytic material in the region;
- and
- growing a linear structure made of a carbon element using the catalytic material as a nucleus,
- wherein the catalytic material is formed by mixing a plurality of kinds of catalytic fine particles each having a different catalytic ability.
2 more elements
Dependencies are inferred from the claim text.