Substrate processing method and substrate processing apparatus

A substrate processing method comprising:

• loading a target substrate into a processing chamber and receiving the target substrate on substrate supporting pins at a first position determined by elevating the substrate supporting pins;
• after said receiving the target substrate on substrate supporting pins, performing a series of heating steps on the target substrate including,
• lowering the substrate supporting pins and performing a first preliminary heating process on the target substrate mounted at a second position on a mounting table for a preset time period within a temperature range in which a warpage of the substrate does not take place, and
• elevating the substrate supporting pins to separate the target substrate from the mounting table and performing a second preliminary heating process on the target substrate while maintaining the target substrate at a third position on the elevated substrate supporting pins within a temperature range in which the target substrate is likely to warp;
• and
• after said series of heating steps, processing the target substrate at a fourth position on the mounting table while heating the substrate at a processing temperature of about 700° C. or higher after lowering the substrate supporting pins to mount the target substrate on the mounting table.

A plasma processing apparatus comprising:

• a vacuum-evacuable processing chamber for processing a target substrate;
• a gas introducing member for supplying a processing gas into the processing chamber;
• a mounting table for mounting thereon the target substrate;
• a heater embedded in the mounting table for heating the target substrate;
• substrate supporting pins protrusible above and retractable below a mounting surface of the mounting table, for supporting the target substrate thereon when the substrate supporting pins elevate above the mounting surface;
• and
• a control unit for controlling substrate processing and said control unit programmed with instructions to execute:
• loading the target substrate into the processing chamber and receiving the target substrate on the substrate supporting pins at a first position determined by elevating the substrate supporting pins;
• after said receiving the target substrate on substrate supporting pins, performing a series of heating steps on the target substrate including,
• lowering the substrate supporting pins and performing a first preliminary heating process on the target substrate mounted at a second position on the mounting table, and
• elevating the substrate supporting pins to separate the target substrate from the mounting table and performing a second preliminary heating process on the target substrate while maintaining the target substrate at a third position on the elevated substrate supporting pins;
• and
• after said series of the heating steps, processing the target substrate at a fourth position on the mounting table while heating the substrate at a processing temperature of about 700° C. or higher after lowering the substrate supporting pins to mount the target substrate on the mounting table.