Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus

A method of manufacturing a semiconductor device, the method comprising:

• loading a substrates into a process vessel;
• performing a process to form one of a silicon oxide film, a silicon nitride film and a silicon oxynitride film on the substrate by alternately repeating:
• (a) forming a silicon-containing layer on the substrate by supplying a first source gas containing a silicon and a second source gas containing the silicon into the process vessel and exhausting the first source gas and the second source gas from the process vessel;
• (b) changing the silicon-containing layer into one of a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer by supplying a reaction gas different from the first source gas and the second source gas into the process vessel and exhausting the reaction gas from the process vessel;
• and
• unloading the processed substrate from the process vessel,
• wherein the first source gas is more reactive than the second source gas, and an amount of the first source gas supplied into the process vessel is set to be less than that of the second source gas supplied into the process vessel.

A substrate processing apparatus comprising:

• a process vessel configured to accommodate a substrate;
• a first source gas supply system configured to supply a first source gas containing an element into the process vessel;
• a second source gas supply system configured to supply a second source gas containing the element into the process vessel;
• a reaction gas supply system configured to supply a reaction gas different from the first source gas and the second source gas into the process vessel;
• an exhaust system configured to exhaust an interior of the process vessel;
• a control unit configured to control the first source gas supply system, the second source gas supply system, the reaction gas supply system and the exhaust system, so as to form one of an oxide film, a nitride film and an oxynitride film on the substrate by alternately repeating:
• (a) forming a layer containing the element on the substrate by supplying the first source gas and the second source gas into the process vessel and exhausting the first source gas and the second source gas from the process vessel;
• and
• (b) changing the layer containing the element into one of an oxide layer, a nitride layer, and an oxynitride layer by supplying the reaction gas into the process vessel and exhausting the reaction gas from the process vessel,
• wherein the first source gas is more reactive than the second source gas, and the control unit is configured to control the first source gas supply system and the second source gas supply system so as to set an amount of the first source gas supplied into the process vessel to be less than that of the second source gas supplied into the process vessel.