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US 8,076,249 B2Granted
Structures containing titanium silicon oxide
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
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Abstract
A dielectric containing a titanium silicon oxide film disposed in an integrated circuit and a method of fabricating such a dielectric provide a dielectric for use in a variety of electronic devices. Embodiments include a dielectric containing a titanium silicon oxide film arranged as one or more monolayers. Embodiments include structures for capacitors, transistors, memory devices, and electronic systems with dielectrics containing a titanium silicon oxide film, and methods for forming such structures.
Claims25
An apparatus comprising:
- a dielectric in an integrated circuit, the dielectric containing a titanium silicon oxide film, the titanium silicon oxide film arranged as one or more monolayers, the titanium silicon oxide film having a regulated amount of oxygen incorporated therein to set a specified characteristic of the titanium silicon oxide film.
An apparatus comprising:
- a memory in an integrated circuit, the memory including a dielectric, the dielectric containing a titanium silicon oxide film, the titanium silicon oxide film arranged as one or more monolayers, the titanium silicon oxide film having a regulated amount of oxygen incorporated therein to set a specified characteristic of the titanium silicon oxide film.
A method of forming an apparatus, the method comprising:
- forming a dielectric in an integrated circuit, the dielectric containing a titanium silicon oxide film, the titanium silicon oxide film formed by a monolayer or partial monolayer sequencing process, wherein forming the titanium silicon oxide film includes regulating an amount of oxygen incorporated in the film to set a specified characteristic for the titanium silicon oxide film.
Dependencies are inferred from the claim text.