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US 8,076,243 B2Granted
Metal precursors for deposition of metal-containing films
AssigneesL'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude, American Air Liquide, Inc.
InventorsChristian Dussarrat, Clement Lansalot-Matras, Vincent M. Omarjee, Cheng-Fang Hsiao
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Abstract
Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-β-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate.
Claims5
A method of forming a metal-containing film on a substrate, comprising:
- a) providing a reactor and at least one substrate disposed therein;
- b) introducing a metal-containing precursor into the reactor, wherein the metal-containing precursor is bis(4N-ethylaminopent-3-en-2N-ethyliminato) Nickel (II);
- c) maintaining the reactor at a temperature of at least about 50° C.;
- d) maintaining the reactor at a pressure of at least about 1 Pa;
- e) contacting the precursor with the substrate to form a metal-containing film;
- and
- f) introducing at least one oxidizing gas into the reactor, wherein the oxidizing gas comprises at least one member selected from the group consisting of:
- O2;
- O3;
- H2O;
- NO;
- carboxylic acid;
- oxygen radicals;
- and mixtures thereof,
- wherein the metal-containing precursor and the oxidizing gas are introduced into the chamber sequentially, and the chamber is configured for plasma enhanced atomic layer deposition.
12 more elements
Dependencies are inferred from the claim text.