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US 8,076,240 B2Granted
Techniques to improve characteristics of processed semiconductor substrates
AssigneeIntermolecular, Inc.
InventorsAnh Ngoc Duong, Chi-l Lang
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Abstract
Techniques to improve characteristics of processed semiconductor substrates are described, including cleaning a substrate using a preclean process, the substrate comprising a dielectric region and a conductive region, introducing a hydroquinone to the substrate after cleaning the substrate using the preclean operation, and forming a capping layer over the conductive region of the substrate after introducing the hydroquinone.
Claims10
A method, comprising:
- cleaning a substrate using a preclean process, the substrate comprising a dielectric region and a conductive region;
- introducing a hydroquinone to the substrate after cleaning the substrate using the preclean operation;
- and
- forming a capping layer over the conductive region of the substrate after introducing the hydroquinone.
1 more element
Dependencies are inferred from the claim text.