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AssigneeFujitsu Semiconductor Limited
InventorsKazuo Kawamura, Shinichi Akiyama, Satoshi Takesako
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A method of manufacturing a semiconductor device, includes the steps of forming an insulating film on a semiconductor substrate having a silicide layer, forming a hole in the insulating film on the silicide layer, cleaning an inside of the hole and a surface of the silicide layer, forming a titanium layer on a bottom surface and an inner peripheral surface of the hole by a CVD method, forming a copper diffusion preventing barrier metal layer on the titanium layer in the hole, and burying a copper layer in the hole.
A method of manufacturing a semiconductor device, comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
To Group IV semiconductors: using conductive layers comprising silicides
Having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs: having non-planar bodies, e.g. having recessed gate electrodes
Arrangements for exerting mechanical stress on the crystal lattice of the channel regions: being in source or drain regions, e.g. SiGe source or drain
Manufacture or treatment: forming source or drain recesses by etching e.g. recessing by etching and then refilling
About 2 years 1 month of term left · ends 10 Dec 2028 (estimated)
This application claims priority to Japanese Patent Application 2007-036377, filed Feb. 16, 2007, and is fully incorporated herein by reference.
The present invention relates to a semiconductor device and a method of manufacturing the same and, more particularly, a semiconductor device having the copper plugs and a method of manufacturing the same.
In the prior art, the process of burying the plug made of tungsten in the contact hole, which is formed in an insulating film on the silicon substrate, contains the steps of forming a contact hole in the insulating film, cleaning the inside of the contact hole by the negative sputtering, forming a titanium film on an upper surface of the insulating film and an inner surface of the contact hole by the physical vapor deposition (PVD), growing a titanium nitride film on the Ti film by the metal organic chemical vapor deposition (MOCVD), burying a tungsten in the contact hole, and then removing the tungsten, the TiN film, and the Ti film on the insulating film by the chemical mechanical polishing (CMP). The tungsten buried in the contact hole serves as the plug.
Understanding of the present invention will be facilitated by consideration of the following detailed description of the preferred embodiments of the present invention taken in conjunction with the accompanying drawings, in which like numerals refer to like parts and in which:
FIGS. 1A to 1K are sectional views showing steps of forming a semiconductor device according to an embodiment of the present invention;
FIGS. 2A to 28A, 28B, 29 and 30 are sectional views showing steps of forming the semiconductor device according to the embodiment of the present invention;
The present invention will be described in detail in connection with non-limiting embodiments with reference to the accompanying drawings.
The copper plugs are formed by the process shown in FIG. 32A to FIG. 32C, for example.
First, in FIG. 32A, a MOS transistor 102 is formed in a region that is formed in a silicon substrate 100 and surrounded by an element isolation insulating film 101. Also, the MOS transistor 102 and the silicon substrate 100 are covered with an interlayer insulating film 103.