Semiconductor device and manufacturing method of same

A method of manufacturing a semiconductor device having a pMISFET, comprising:

• forming a plurality of semiconductor layers having a rectangular solid-shape at an upper part of a semiconductor substrate, the rectangular solid-shape having a top surface with a (100) plane being parallel to a principal plane of the semiconductor substrate and a side face with a (100) plane perpendicular to the principal plane of the semiconductor substrate;
• forming a gate dielectric film at least on side faces of the semiconductor layers;
• forming a metal film on the gate dielectric film;
• depositing a semiconductor film on the metal film in such a way as to fill a portion between adjacent ones of the semiconductor layers;
• performing impurity ion implantation to amorphasize an upper part of the semiconductor film;
• patterning the semiconductor film and the metal film to thereby form a gate electrode;
• forming a stress liner dielectric film on the gate electrode;
• performing thermal processing for crystallizing the upper part of the semiconductor film;
• and
• removing the stress liner dielectric film.

A method of manufacturing a semiconductor device having a pMISFET, comprising:

• forming a plurality of semiconductor layers having a rectangular solid-shape at an upper part of a semiconductor substrate, the rectangular solid-shape having a top surface with a (100) plane being parallel to a principal plane of the semiconductor substrate and a side face with a (100) plane perpendicular to the principal plane of the semiconductor substrate;
• forming a gate dielectric film at least at side faces of the semiconductor layers;
• forming a metal film on the gate dielectric film in such a way as to fill a portion between adjacent ones of the semiconductor layers;
• planarizing the metal film by polishing;
• depositing a semiconductor film on the metal film;
• performing impurity ion implantation to amorphasize an upper part of the semiconductor film;
• patterning the semiconductor film and the metal film to thereby form a gate electrode;
• forming a stress liner dielectric film on the gate electrode;
• performing thermal processing for crystallizing the upper part of the semiconductor film;
• and
• removing the stress liner dielectric film.

A semiconductor device comprising:

• a semiconductor substrate;
• first semiconductor layers having a rectangular solid-shape formed at an upper part of the semiconductor substrate to have a first top surface with a (100) plane being parallel to a principal plane of the semiconductor substrate and a first side face with a (100) plane perpendicular to the principal plane of the semiconductor substrate;
• and
• a pMISFET, wherein
• the pMISFET has a first channel region formed at least at the first side face of the first semiconductor layers, a first gate dielectric film formed at least on the first side face of the first semiconductor layers, a first gate electrode covering the first channel region with the first gate dielectric film being sandwiched therebetween, and first source/drain regions formed within the rectangular solid-shaped first semiconductor layers in such a way as to interpose the first channel region therebetween,
• the first gate electrode includes a metal film and a first semiconductor film on the metal film,
• the metal film fills a portion between adjacent ones of the first semiconductor layers interposing the first gate dielectric film in between the metal film and the first semiconductor layers,
• the first semiconductor film has its lowermost surface which is above the first top surface of the first semiconductors layers, and
• the first channel region is applied a compressive strain in a direction perpendicular to the principal plane of the semiconductor substrate and the first channel region is applied a tensile strain in a direction perpendicular to the first side face.