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US 8,076,229 B2Granted
Methods of forming data cells and connections to data cells
AssigneeMicron Technology, Inc.
InventorWerner Juengling
Life of this patent
Estimating the term…
Abstract
Disclosed are methods and devices, among which is a method that includes forming a lower conductive material on a substrate, forming a stop material on the substrate, forming a sacrificial material on the substrate, etching the sacrificial material with an etch that is selective to the sacrificial material and selective against the stop material, and etching the lower conductive material.
Claims18
A method, comprising:
- forming a lower stop material on a substrate;
- forming a conductive material on the lower stop material;
- forming an upper stop material on the conductive material;
- forming a sacrificial material on the upper stop material;
- etching the sacrificial material with an etch that is selective to the sacrificial material and selective against the upper stop material;
- and
- etching the conductive material.
4 more elements
A method, comprising:
- forming a conductive material on a substrate;
- forming a stop material on the conductive material;
- forming a sacrificial material on the stop material;
- etching the sacrificial material with an etch that is selective to the sacrificial material and selective against the stop material;
- forming an implant barrier on the sacrificial material before etching the sacrificial material, wherein the implant barrier comprises a generally amorphous material;
- and
- etching the conductive material.
4 more elements
A method, comprising:
- forming a conductive material on a substrate;
- forming a stop material on the conductive material;
- forming a sacrificial material on the stop material;
- etching the sacrificial material with an etch that is selective to the sacrificial material and selective against the stop material;
- etching the conductive material;
- and
- forming a data line in a recess formed by removing the conductive material.
4 more elements
A method, comprising:
- forming a lower stop material on a substrate;
- forming a conductive material on the lower stop material;
- forming an upper stop material on the conductive material;
- forming a sacrificial material on the upper stop material;
- etching the sacrificial material with an etch that is selective to the sacrificial material and selective against the upper stop material;
- and
- etching the conductive material;
- and
- forming a gate from the conductive material.
6 more elements
A method, comprising:
- patterning a data line and a gate with a first lithography step;
- forming the data line from a first material;
- and
- forming the gate from a second material,
- wherein patterning the data line and the gate comprises patterning the data line in an array area of a substrate and patterning the gate in a periphery area of the substrate.
2 more elements
A method, comprising:
- patterning a data line and a gate with a first lithography step;
- forming the data line from a first material;
- and
- forming the gate from a second material,
- wherein patterning the data line and the gate comprises etching the second material before the first material is formed on the substrate.
2 more elements
A method, comprising:
- patterning a first structure and a second structure with a first lithography step;
- designating the first structure as having a first function and the second structure as having a second function with a second lithography step, wherein lithographic limit of the first lithography step is smaller than a lithographic limit of the second lithography step.
Dependencies are inferred from the claim text.