Solid-state image capturing device, manufacturing method for the same and electronic information device

A method for manufacturing a solid-state image capturing device, the solid-state image capturing device including:

• on a semiconductor substrate, a plurality of light receiving sections for converting incident light into signal electric charge and accumulating the signal electric charge;
• transfer sections for reading the signal electric charge accumulated in the plurality of respective light receiving sections;
• reading gate electrodes provided over the respective transfer sections in order to control the reading of the signal electric charge accumulated in the plurality of respective light receiving sections;
• and
• an electric charge detection section shared by the light receiving sections of a plurality of pixels in order to detect the signal electric charge read through the respective transfer sections,
• the method comprising the step(s) of:
• a transfer section impurity region forming step of setting a first ion implantation direction, the first ion implantation direction being set so that a location of an edge of an impurity region of each of the transfer sections, which is between the impurity region of the transfer section and an electric charge accumulation region of the light receiving section, coincides with a location of an edge of each of the respective reading gate electrodes at the boundary between them and is consistent, and performing an ion implantation from the first ion implantation direction so as to form the impurity region of each of the transfer sections;
• an electric charge accumulation region forming step of setting a second ion implantation direction, the second ion implantation direction being set so that a location of an edge of the electric charge accumulation region of each of the light receiving sections with respect to a location of an edge of each of the respective reading gate electrodes coincide at the boundary between them and is consistent, and performing an ion implantation from the second ion implantation direction so as to form the electric charge accumulation region of each of the light receiving sections;
• and
• wherein the electric charge accumulation region forming step performs the second ion implantation process from a direction on the side of the light receiving section with respect to the reading gate electrode such that the electric charge accumulation region is formed so as to extend beyond said edge surface of the reading gate electrode and so as to extend underneath the impurity region of the transfer section located under the reading gate electrode.