Thin-film deposition and recirculation of a semi-conductor material
AssigneeCalyxo, Inc.
InventorKenneth R. Kormanyos
Life of this patent
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Abstract
A process for coating a substrate at atmospheric pressure is disclosed, the process comprising the steps of vaporizing a mass of semiconductor material within a heated inert gas stream to create a fluid mixture having a temperature above the condensation temperature of the semiconductor material, directing the fluid mixture at the substrate, the substrate having a temperature below the condensation temperature of the semiconductor material thereby depositing a layer of the semiconductor material onto a surface of the substrate, extracting undeposited semiconductor material; and circulating the undeposited semiconductor material into the fluid mixture having a temperature above the condensation temperature.
Claims20
A process for coating a substrate heated to a temperature below the condensation temperature of a semiconductor material at atmospheric pressure, comprising the steps of:
- mixing a mass of semiconductor material and a heated inert gas stream;
- vaporizing the semiconductor material in the heated inert gas stream to create a fluid mixture having a temperature above the condensation temperature of the semiconductor material;
- directing the fluid mixture at the substrate, wherein the substrate is at substantially atmospheric pressure;
- depositing a layer of the semiconductor material onto a surface of the substrate;
- extracting undeposited semiconductor material;
- circulating the undeposited semiconductor material into the fluid mixture;
- and
- repeating the steps of generating, directing, depositing, extracting, and circulating to minimize an amount of undeposited semiconductor material.
A process for coating a substrate heated to a temperature below the condensation temperature of a semiconductor material at atmospheric pressure, comprising the steps of:
- metering a desired mass of semiconductor material into a heated inert gas;
- vaporizing the semiconductor material in the heated inert gas stream to create a saturated fluid mixture having a temperature above the condensation temperature of the semiconductor material;
- directing the saturated fluid mixture at the substrate, wherein the substrate is at substantially atmospheric pressure;
- depositing a layer of the semiconductor material onto a surface of the substrate;
- extracting undeposited semiconductor material;
- circulating the undeposited semiconductor material into the saturated fluid mixture;
- repeating the steps of generating, directing, depositing, extracting, and circulating to minimize an amount of undeposited semiconductor material.
A process for coating a substrate heated to a temperature below the condensation temperature of a semiconductor material at atmospheric pressure, comprising the steps of:
- mixing a mass of semiconductor material and a heated inert gas stream;
- vaporizing the semiconductor material in the heated inert gas stream to create a saturated fluid mixture having a temperature above the condensation temperature of the semiconductor material;
- directing the fluid mixture at the substrate, wherein the substrate is at substantially atmospheric pressure;
- depositing a layer of the semiconductor material onto a surface of the substrate;
- and
- extracting undeposited semiconductor material to minimize particulate deposition on the heated substrate.
Dependencies are inferred from the claim text.