Method for the production of photo-patterned carbon electronics
AssigneeBAE Systems Information and Electronic Systems Integration Inc.
InventorsDaniel N. Carothers, Rick L. Thompson
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Abstract
A method for the manufacture of carbon based electrical components is herein presented. In the method a wafer substrate is provided upon which a first layer of carbon based semiconductor is deposited. The first layer of carbon based semiconductor is introduced to a first doping agent precursor and the first doping agent precursor and first layer of carbon based semiconductor are irradiated with light having a wavelength in the ultraviolet spectrum thereby selectively doping areas of the first layer of carbon based semiconductor.
Claims15
A method for the production of carbon based electrical components, said method comprising:
- providing a wafer substrate;
- depositing upon said wafer substrate a first layer of carbon based semiconductor;
- introducing said first layer of carbon based semiconductor to a first doping agent precursor;
- and
- irradiating said first doping agent precursor and said first layer of carbon based semiconductor with light having a wavelength in the ultraviolet spectrum thereby selectively doping areas of said first layer of carbon based semiconductor.
A method for the production of carbon based electrical components, said method comprising:
- providing a wafer substrate;
- depositing upon said wafer substrate a first layer of carbon based semiconductor;
- introducing said first layer of carbon based semiconductor to a first doping agent precursor;
- irradiating said first doping agent precursor and said first layer of carbon based semiconductor with light having a wavelength in the ultraviolet spectrum thereby selectively doping areas of said first layer of carbon based semiconductor;
- depositing a second layer of carbon based semiconductor upon said first layer of carbon based semiconductor;
- introducing said second layer of carbon based semiconductor to said first doping agent precursor;
- and
- irradiating said first doping agent precursor and said second layer of carbon based semiconductor thereby selectively doping areas of said second layer of carbon based semiconductor.
Dependencies are inferred from the claim text.