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US 8,076,217 B2Granted
Controlled quantum dot growth
AssigneeEmpire Technology Development LLC
InventorEzekiel Kruglick
Life of this patent
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Abstract
The present disclosure generally relates to techniques for controlled quantum dot growth as well as a quantum dot structures. In some examples, a method is described that includes one or more of providing a substrate, forming a defect on the substrate, depositing a layer on the substrate and forming quantum dots along the defect.
Claims18
A method for quantum dot growth comprising:
- forming a trench in a substrate;
- filling the trench with a material to form a defect region along an interface between the material and the substrate on a surface of the substrate;
- and
- growing quantum dots in the defect region, wherein the growth is based at least in part on a location of the defect region, such that the growth of quantum dots is substantially confined to the defect region.
1 more element
A computer accessible medium having stored thereon computer executable instructions for performing a procedure for quantum dot growth the procedure comprising:
- forming a trench in a substrate;
- filling the trench with a first material to form a defect region along an interface between the material and the substrate on a surface of a substrate;
- and
- depositing a second material on the surface of the substrate such that quantum dots are formed in the defect region, wherein the quantum dots are substantially confined to the defect region.
1 more element
Dependencies are inferred from the claim text.