Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device, comprising the steps of:

• forming, above a semiconductor substrate, a capacitor structure including a lower electrode and an upper electrode that sandwich a dielectric film;
• forming, over the capacitor structure, a wiring structure electrically connected to the capacitor structure;
• forming a pad electrode electrically connected to the wiring structure;
• depositing a first insulating film to cover the pad electrode and planarizing a surface of the insulating film;
• forming, on the first insulating film, a second insulating film having a capability of preventing penetration of hydrogen and having a lower etching rate than that of the first insulating film;
• forming, in the second insulating film and the first insulating film, an opening exposing a portion of a surface of the pad electrode;
• and
• forming a protective metal film made of a moisture-resistant metal so that the protective metal fills the opening and is coupled to the pad electrode.