Method for fabricating metal-oxide semiconductor transistors
AssigneeUnited Microelectronics Corp.
InventorsTsai-Fu Hsiao, Ching-I Li, Po-Yuan Chen, Chun-An Lin, Hsiang-Ying Wang, Chao-Chun Chen, Chin-Cheng Chien
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Abstract
A method for fabricating a metal-oxide semiconductor transistor is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a gate structure on the semiconductor substrate; and performing a first ion implantation process to implant a first molecular cluster having carbon, boron, and hydrogen into the semiconductor substrate at two sides of the gate structure for forming a doped region, wherein the molecular weight of the first molecular cluster is greater than 100.
Claims5
A method for fabricating a metal-oxide semiconductor transistor, comprising:
- providing a semiconductor substrate;
- forming a gate structure on the semiconductor substrate;
- and
- performing a first ion implantation process to implant a first molecular cluster having carbon, boron, and hydrogen into the semiconductor substrate at two sides of the gate structure for forming a doped region, wherein the molecular weight of the first molecular cluster is greater than 100.
Dependencies are inferred from the claim text.