Semiconductor device and method of manufacturing the same
AssigneeElpida Memory, Inc.
InventorHiroyuki Fujimoto
Life of this patent
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Abstract
A polysilicon film is formed all over a surface of a semiconductor substrate, then is subject to a CMP process through a mask pattern as a stopper. Then, a metal film is formed all over the resulting surface, and is allowed at least a part of the polysilicon film and at least a part of the metal film to react with each other to silicidize the metal. This forms the gate electrode.
Claims9
A method of manufacturing a semiconductor device comprising a Fin field effect transistor, the method comprising:
- (1) preparing a semiconductor substrate;
- (2) forming an oxide film on a surface of the semiconductor substrate;
- (3) forming an isolation region in the semiconductor substrate;
- (4) forming a mask pattern on the entire semiconductor substrate expect for the isolation region;
- (5) etching the oxide film away through the mask pattern as a mask to expose the semiconductor substrate;
- (6) forming a sacrifice oxide film on a part of the semiconductor substrate exposed in step (5);
- (7) removing the sacrifice oxide film to expose the semiconductor substrate;
- (8) forming a gate insulating film on the semiconductor substrate exposed in step (7);
- (9) forming a polysilicon film all over the semiconductor substrate;
- (10) executing a CMP process on the polysilicon film through the mask pattern as a stopper;
- (11) forming a metal film all over the polysilicon film;
- (12) forming a gate electrode by allowing at least a part of the polysilicon film to react with at least a part of the metal film to silicidize the metal;
- (13) forming a mask A on the gate electrode;
- (14) removing the metal film through the mask A as a mask;
- (15) removing the mask pattern;
- and
- (16) implanting impurity into the semiconductor substrate through the mask A as a mask to form a source/drain region.
A method of manufacturing a semiconductor device comprising a Fin field effect transistor, the method comprising:
- (1) forming a structure comprising a projecting region on a predetermined plane of a semiconductor substrate, and a mask pattern and a gate insulating film between masks of the mask pattern on a top surface of the projecting region;
- (2) forming a polysilicon film all over the structure;
- (3) executing a CMP process on the polysilicon film through the mask pattern as a stopper;
- (4) forming a metal film all over the polysilicon film;
- (5) forming a gate electrode comprising a metal silicide layer formed by reacting the polysilicon film with the metal film;
- (6) forming a mask A on the gate electrode;
- (7) removing the metal film through the mask A as a mask;
- (8) removing the mask pattern;
- and
- (9) implanting impurity into the semiconductor substrate through the mask A as a mask to form a source/drain region,
- wherein step (8) comprises:
- forming a protect film all over the structure;
- and
- performing an etch back process to remove the mask pattern and the protect film on the mask pattern so as to leave the mask A on the gate electrode.
A method of manufacturing a semiconductor device comprising a Fin field effect transistor, the method comprising:
- (1) forming a structure comprising a projecting region on a predetermined plane of a semiconductor substrate, and a mask pattern and a gate insulating film between masks of the mask pattern on a top surface of the projecting region;
- (2) forming a polysilicon film all over the structure;
- (3) executing a CMP process on the polysilicon film through the mask pattern as a stopper;
- (4) forming a metal film all over the polysilicon film;
- (5) forming a gate electrode comprising a metal silicide layer formed by reacting the polysilicon film with the metal film;
- (6) forming a mask A on the gate electrode;
- (7) removing the metal film through the mask A as a mask;
- (8) removing the mask pattern;
- and
- (9) implanting impurity into the semiconductor substrate through the mask A as a mask to form a source/drain region,
- wherein the mask pattern and the mask A comprise silicon nitride.
Dependencies are inferred from the claim text.