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US 8,076,195 B2Granted
Resistive memory architectures with multiple memory cells per access device
AssigneeMicron Technology, Inc.
InventorsJun Liu, Mike Violette
Life of this patent
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Abstract
A resistive memory structure, for example, phase change memory structure, includes one access device and two or more resistive memory cells. Each memory cell is coupled to a rectifying device to prevent parallel leak current from flowing through non-selected memory cells. In an array of resistive memory bit structures, resistive memory cells from different memory bit structures are stacked and share rectifying devices.
Claims3
A method of fabricating a resistive memory structure, the method comprising:
- forming an access device with a source, drain and gate, the source and drain being doped to a first dopant type;
- depositing inter-level dielectrics on top of the access device;
- etching a via through the inter-level dielectrics to either the doped source or drain;
- doping a bottom of the via with a second dopant type to form a rectifying device at the bottom of the via, wherein doping the bottom of each via results in a doped region shared by more than one via;
- filling the via;
- and
- forming a resistive memory cell above the via so that the cell is electrically coupled to the access device through the via and the rectifying device.
4 more elements
Dependencies are inferred from the claim text.