Method of laser annealing semiconductor layer and semiconductor devices produced thereby
AssigneeToshiba Matsushita Display Technology Co., Ltd.
InventorsKian Kiat Lim, Atsushi Nakamura, Kai Pheng Tan, Eng Soon Lim, Poh Ling Fu, Takaaki Kamimura
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Abstract
A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×1020 atoms/cc, irradiating a first area of the nitrogen-doped layer in a low oxygen environment with a laser beam and irradiating a second area of the nitrogen-doped layer in a low oxygen environment with a laser beam, a part of the second area overlapping with the first area.
Claims16
A method of laser annealing a non-single-crystalline semiconductor layer, the non-single-crystalline semiconductor layer including a product region, the method comprising:
- forming a nitrogen-doped layer on the non-single-crystalline semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×1020 atoms/cc;
- irradiating a first area of the nitrogen-doped layer in a low oxygen environment with a laser beam;
- and
- irradiating a second area of the nitrogen-doped layer in a low oxygen environment with a laser beam, a part of the second area overlapping with the first area, thereby forming a laser-annealed semiconductor layer of which a root mean square (rms) value of grain protrusion height is less than 20 nm.
A method of laser annealing a non-single-crystalline semiconductor layer, the non-single-crystalline semiconductor layer including a product region, the method comprising:
- forming a nitrogen-doped layer on the non-single-crystalline semiconductor layer having a nitrogen concentration of at least 3×1020 atoms/cc and an oxygen concentration in the range of 3×1021 to 7×1022 atoms/cc;
- irradiating a first area of the nitrogen-doped layer in a low oxygen environment with a laser beam;
- irradiating a second area of the nitrogen-doped layer in a low oxygen environment with a laser beam, a part of the second area overlapping with the first area, thereby forming a laser-annealed semiconductor layer of which a root mean square (rms) value of grain protrusion height is less than 20 nm.
Dependencies are inferred from the claim text.