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US 8,076,180 B2Granted
Repairable semiconductor device and method
AssigneeInfineon Technologies AG
InventorsThorsten Meyer, Gerald Ofner
Life of this patent
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Abstract
Repairable semiconductor device and method. In one embodiment a method, provides a first body having a first semiconductor chip and a first metal layer. A second body includes a second semiconductor chip and a second metal layer. Metal of the first metal layer is removed. The first semiconductor chip is removed from the first body. The second body is attached to the first body. The first metal layer is electrically coupled to the second metal layer.
Claims16
A method, comprising:
- providing a first body comprising a first semiconductor chip and a first metal layer;
- providing a second body comprising a second semiconductor chip and a second metal layer;
- partially removing the first metal layer;
- removing the first semiconductor chip from the first body;
- attaching the second body to the first body;
- and
- electrically coupling the first metal layer to the second metal layer.
4 more elements
A method, comprising:
- providing a first body comprising a first electrically insulating material, at least a first and a second semiconductor chip embedded in the first electrically insulating material and a first metal layer;
- providing a second body comprising a second electrically insulating material, a third semiconductor chip embedded in the second electrically insulating material and a second metal layer;
- separating the first semiconductor chip from the second semiconductor chip by cutting through the first metal layer and the first electrically insulating material along a first plane;
- attaching the second body to the first plane of the first body;
- and
- electrically coupling the first metal layer to the second metal layer.
3 more elements
Dependencies are inferred from the claim text.