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US 8,076,174 B2Granted
Method of forming a sputtering target
AssigneeMiasole
InventorsDaniel R. Juliano, Deborah Mathias, Neil M. Mackie
Life of this patent
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Abstract
A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.
Claims10
A method of forming a sputtering target, comprising:
- forming a sputtering layer comprising a first material which comprises an alkali-containing transition metal directly on a second material of a support structure,
- wherein the second material does not negatively impact a performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell made from the sputtering target.
Dependencies are inferred from the claim text.