Method of manufacturing solid-state imaging device and method of manufacturing electronic apparatus
AssigneeSony Corporation
InventorKentaro Akiyama
Life of this patent
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Abstract
A method of manufacturing a solid-state imaging device, where a signal circuit is formed on an insulating interlayer on a first side of a semiconductor substrate in which a photoelectric conversion part is formed and light is incident on the photoelectric conversion part from a second side thereof. The method includes the steps of: forming an on-chip color filter and an on-chip microlens on the second side where light is incident; and forming an opening in a pad part on the second side where light is incident.
Claims9
A method of manufacturing a solid-state imaging device, where a signal circuit is formed on an insulating interlayer on a first side of a semiconductor substrate in which a photoelectric conversion part is formed and light is incident on the photoelectric conversion part from a second side thereof, the method comprising the steps of:
- forming an on-chip color filter and an on-chip microlens on the second side where light is incident;
- and
- forming a primary opening in a pad part on the second side where light is incident, after forming the on-chip color filter and the on-chip microlens
- forming a secondary opening by selectively dry etching and removing the semiconductor substrate from the surface of the semiconductor substrate to reach an upper surface of the insulating interlayer at a portion corresponding to the opening through a resist mask formed on the on-chip microlens.
A method of manufacturing an electronic apparatus, where a signal circuit is formed on an insulating interlayer on a first side of a semiconductor substrate on which a photoelectric conversion part is formed and light is incident on the photoelectric conversion part from a second side thereof, the method comprising the steps of:
- forming an on-chip color filter and an on-chip microlens on the second side where light is incident;
- forming an opening in a pad part on the second side where light is incident, after forming the on-chip color filter and the on-chip microlens;
- and
- selectively dry etching and removing the semiconductor substrate from the surface of the semiconductor substrate to reach an upper surface of the insulating interlayer at a portion corresponding to the opening through a resist mask formed on the on-chip microlens.
Dependencies are inferred from the claim text.