Method for fabricating an optically pumped semiconductor apparatus

#This is a U.S. national stage under 35 USC 371 of application No. PCT/DE2006/002337, filed on 29 Dec. 2006.

#This application claims the priority of German applications no. 10 2005 063 103.7 filed Dec. 30, 2005 and no. 10 2006 017 293.0 filed Apr. 12, 2006, the entire content of both of which is hereby incorporated by reference.

#The invention specifies a method for fabricating an optically pumped semiconductor apparatus.

#The method described here and the semiconductor apparatus fabricated in line with the method described here are explained in more detail below using exemplary embodiments and with reference to the associated figures.

#FIG. 1A shows a schematic sectional view of the pump unit in a semiconductor apparatus fabricated in line with the method described here, based on a first exemplary embodiment of the semiconductor apparatus.

#FIG. 1B shows a schematic plan view of the pump unit in the semiconductor apparatus fabricated in line with the method described here, based on the first exemplary embodiment.

#In the exemplary embodiments and figures, parts which are the same or have the same action are in each case provided with the same reference symbols. The elements shown should not be considered as being true to scale, but rather individual elements may be shown in an exaggerated size as an aid to understanding.

#FIG. 1A shows a schematic sectional view of the pump unit in a semiconductor apparatus fabricated in line with the method described here, based on a first exemplary embodiment of the semiconductor apparatus.

#The pump unit comprises a connection carrier 14. The base area of the surface-emitting semiconductor laser apparatuses described here—that is to say the base area of the connection carrier 14—is preferably between 30 and 150 square millimeters. In the exemplary embodiment shown here, the connection carrier 14 comprises a basic body 12, a bottom metallization 11 and a patterned top metallization 13. The connection carrier 14 is preferably a direct bonded copper (DBC) composite. By way of example, the basic body 12 consists of a ceramic material such as an AlN. The thickness of the basic body 12 is preferably between 0.2 and 0.5 mm, particularly preferably 0.38 mm. The top metallization 13 and the bottom metallization 11 consist of copper, for example, and have a thickness between 0.1 and 0.3 mm, preferably 0.2 mm. Advantageously, copper has a high thermal conductivity of approximately 400 watts per meter Kelvin. The compound structure with the AlN basic body 12 lowers the effective coefficient of thermal expansion of the connection carrier 14 on its surface. This benefits the mounting of semiconductor bodies with low expansion coefficients.