US 8,076,053 B2 · Upper layer-forming composition and photoresist patterning method

Abstract

An upper layer-forming composition formed on a photoresist while causing almost no intermixing with the photoresist film and a photoresist patterning method are provided. The upper layer-forming composition is stably maintained without being eluted in a medium such as water during liquid immersion lithography and is easily dissolved in an alkaline developer. The upper layer-forming composition covers a photoresist film for forming a pattern by exposure to radiation. The composition comprises a resin dissolvable in a developer for the photoresist film and a solvent in which the resin is dissolved. The solvent has a viscosity of less than 5.2×10−3 Pa·s at 20° C. In addition, the solvent does not cause intermixing of the photoresist film and the upper layer-forming composition. The solvent contains an ether or a hydrocarbon.

Claims4

Dependent claims

An upper layer-forming composition covering a photoresist film for forming a pattern by exposure to radiation, comprising a resin dissolvable in a developer for the photoresist film and a solvent in which the resin is dissolved,

wherein the solvent has a viscosity of less than 5.2×10−3 Pa·s at 20° C.,
does not cause intermixing of the photoresist film and the upper layer-forming composition, and is a mixture of a compound shown by the following formula (1) and a monohydric alcohol solvent having 1 to 10 carbon atoms,
R1—O—R2 (1)
wherein R1 and R2 individually represent a hydrocarbon group having 1 to 8 carbon atoms or a halogenated hydrocarbon group.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

12/091,712Filed 25 Oct 2006

Priority

JP 2005-31277527 Oct 2005

Published

US 2010/0003615 A17 Jan 2010

Granted

13 Dec 2011

Term ends

Not estimatedThe source records don’t support an estimate.

Classification7 codes

G03F 7/11
Characterised by structural details, e.g. supports, auxiliary layers: having cover layers or intermediate layers, e.g. subbing layers
C08F 220/1811
With acrylic or methacrylic acids: c10or C11-acrylate, e.g. isodecyl acrylate, isobornyl acrylate or 2-naphthyl acrylate
G03F 7/2041
Exposure; Apparatus therefor: in the presence of a fluid, e.g. immersion; using fluid cooling means
C08F 220/1807
With acrylic or methacrylic acids: c7-acrylate, e.g. heptyl acrylate or benzyl acrylate

Upper layer-forming composition and photoresist patterning method

Life of this patent

Upper layer-forming composition and photoresist patterning method

Life of this patent

Abstract

Claims4