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AssigneeSpringWorks, LLC
InventorsRichard E. Demaray, Hong Mei Zhang, Mukundan Narasimhan, Vassiliki Milonopoulou
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High density oxide films are deposited by a pulsed-DC, biased, reactive sputtering process from a titanium containing target to form high quality titanium containing oxide films. A method of forming a titanium based layer or film according to the present invention includes depositing a layer of titanium containing oxide by pulsed-DC, biased reactive sputtering process on a substrate. In some embodiments, the layer is TiO2. In some embodiments, the layer is a sub-oxide of Titanium. In some embodiments, the layer is TixOy wherein x is between about 1 and about 4 and y is between about 1 and about 7. In some embodiments, the layer can be doped with one or more rare-earth ions. Such layers are useful in energy and charge storage, and energy conversion technologies.
A titanium-based layer, comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Deposition from the gas or vapour phase: using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
Reactive sputtering or evaporation: reactive sputtering
Oxides: of refractory metals or yttrium
Applying energy to the substrate during sputtering: using substrate bias
Term ended 11 Sep 2026 (estimated)
1. Field of the Invention
The present invention is related to fabrication of thin films for planar energy and charge storage and energy conversion and, in particular, thin films deposited of titanium and titanium oxides, sub oxides, and rare earth doped titanium oxides and sub oxides for planar energy and charge storage and energy conversion.
2. Discussion of Related Art
FIGS. 1A and 1B illustrate a pulsed-DC biased reactive ion deposition apparatus that can be utilized in the deposition according to the present invention.
FIG. 2 shows an example of a target that can be utilized in the reactor illustrated in FIGS. 1A and 1B.
FIGS. 3A and 3B illustrate various configurations of layers according to embodiments of the present invention.
In the figures, elements having the same designation have the same or similar functions.
Miniaturization is driving the form factor of portable electronic components. Thin film dielectrics with high dielectric constants and breakdown strengths allow production of high density capacitor arrays for mobile communications devices and on-chip high-dielectric capacitors for advanced CMOS processes. Thick film dielectrics for high energy storage capacitors allow production of portable power devices.
Some embodiments of films deposited according to the present invention have a combination of high dielectric and high breakdown voltages. Newly developed electrode materials allow the production of very thin films with high capacitance density. The combination of high dielectric and high breakdown voltages produce thick films with new levels of available energy storage according to E=½CV2.