Information recording medium and method for manufacturing the same

An information recording medium on and/or from which information can be recorded and/or reproduced by applying light or applying electrical energy, and which media comprises:

• at least one recording layer,
• at least one interface layer of a Si—In—Zr/Hf—O-based material comprising Si, In, M1 (M1 representing at least one element selected from among Zr and Hf) and oxygen (O), wherein the layer of Si—In—Zr/Hf—O-based material comprises 1 atomic % or more Si,
• at least one dielectric layer of a Si—In—Zr/Hf—O-based material comprising Si, In, M1 (M1 representing at least one element selected from among Zr and Hf) and oxygen (O), wherein the layer of Si—In—Zr/Hf—O-based material comprises 1 atomic % or more Si, and
• at least one reflective layer,
• wherein a layer of Si—In—Zr/Hf—O-based material as an interface layer, another layer of Si—In—Zr/Hf—O-based material as a dielectric layer and a reflective layer are stacked in this order on one surface of a recording layer, and
• a proportion of In occupying the Si—In—Zr/Hf—O-based material as an interface layer is larger than a proportion of In occupying the Si—In—Zr/Hf—O-based material as a dielectric layer, and/or
• a proportion of Si occupying the Si—In—Zr/Hf—O-based material as an interface layer is smaller than a proportion of Si occupying the Si—In—Zr/Hf—O-based material as a dielectric layer.