Power loading substrates to reduce particle contamination
AssigneeApplied Materials, Inc.
InventorsDong-Kil Yim, John M. White, Soo Young Choi, Han Byoul Kim, Jin Man Ha, Beom Soo Park
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AssigneeApplied Materials, Inc.
InventorsDong-Kil Yim, John M. White, Soo Young Choi, Han Byoul Kim, Jin Man Ha, Beom Soo Park
Estimating the term…
A method for preventing particle contamination within a processing chamber is disclosed. Preheating the substrate within the processing chamber may cause a thermophoresis effect so that particles within the chamber that are not adhered to a surface may not come to rest on the substrate. One method to increase the substrate temperature is to plasma load the substrate. Plasma loading comprises providing an inert gas plasma to the substrate to heat the substrate. Another method to increase the substrate temperature is high pressure loading the substrate. High pressure loading comprises heating the substrate while increasing the chamber pressure to between about 1 Torr and about 10 Torr. By rapidly increasing the substrate temperature within the processing chamber prior to substrate processing, particle contamination is less likely to occur.
A plasma enhanced chemical vapor deposition method of processing a substrate within a chamber having a showerhead, sequentially comprising:
Dependencies are inferred from the claim text.