Transparent conductive film
AssigneeNitto Denko Corporation
InventorsTomotake Nashiki, Hideo Sugawara
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Abstract
The present invention provides a transparent conductive film having: a transparent base film; a transparent SiOx thin film having a thickness of from 10 to 100 nm, a refractive index of from 1.40 to 1.80 and an average surface roughness Ra of from 0.8 to 3.0 nm, wherein x is from 1.0 to 2.0; and a transparent conductive thin film including an indium-tin complex oxide, which has a thickness of from 20 to 35 nm and a ratio of SnO2/(In2O3+SnO2) of from 3 to 15 wt %, wherein the transparent conductive thin film is disposed on one side of the transparent base film through the transparent SiOx thin film.
Claims2
A method for producing a transparent conductive film, which comprises:
- forming a transparent SiOx thin film on a surface of a transparent base film by a dry thin film forming method;
- and
- forming a transparent conductive thin film comprising an indium-tin complex oxide in direct contact with the transparent SiOx thin film,
- forming a hard coat treated layer in direct contact with a transparent substrate,
- forming a transparent adhesive layer in direct contact with said transparent substrate and with said transparent base film,
- wherein the transparent SiOx thin film has a thickness of from 10 to 100 nm, a refractive index of from 1.40 to 1.80 and an average surface roughness Ra of from 0.8 to 3.0 nm, wherein x is from 1.0 to 2.0,
- wherein the transparent conductive thin film has a thickness of from 20 to 35 nm and a ratio of SnO2/(In2O3+SnO2) of from 3 to 15 wt %.
Dependencies are inferred from the claim text.