Remote plasma cleaning source having reduced reactivity with a substrate processing chamber
AssigneeApplied Materials, Inc.
InventorsKarl A. Littau, Chiliang L. Chen, Anand Vasudev
Life of this patent
Estimating the term…
Loading patent…
AssigneeApplied Materials, Inc.
InventorsKarl A. Littau, Chiliang L. Chen, Anand Vasudev
Estimating the term…
A method and apparatus for cleaning a chamber in a substrate processing system having less reactivity with the chamber walls and the components contained therein. The method includes mixing a diluent gas with a flow of radicals produced by a plasma remotely disposed with respect to the chamber, at a point located between a plasma applicator and the chamber. The apparatus includes a fluid manifold having multiple inlets and an outlet with the outlet being coupled to an intake port of the chamber. One of the inlets are in fluid communication with the plasma applicator, with the remaining inlets being in fluid communication with a supply of the diluent gas. In this fashion, the diluent gas flow and the flow of reactive radicals mix when traveling between the inlets and the outlet to form a gas-radical mixture egressing from the outlet and traversing through the intake port.
A method of removing residue from a substrate processing chamber, said method comprising the steps of:
Dependencies are inferred from the claim text.