US 8,075,703 B2 · Immersive oxidation and etching process for cleaning silicon electrodes

Abstract

A process for cleaning a silicon electrode is provided where the silicon electrode is soaked in an agitated aqueous detergent solution and rinsed with water following removal from the aqueous detergent solution. The rinsed silicon electrode is then soaked in an agitated isopropyl alcohol (IPA) solution and rinsed. The silicon electrode is then subjected to an ultrasonic cleaning operation in water following removal from the IPA solution. Contaminants are then removed from the silicon electrode by soaking the silicon electrode in an agitated mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water. The silicon electrode is subjected to an additional ultrasonic cleaning operation following removal from the mixed acid solution and is subsequently rinsed and dried. In other embodiments of the present disclosure, it is contemplated that the silicon electrode can be soaked in either the agitated aqueous detergent solution, the agitated isopropyl alcohol (IPA) solution, or both. Additional embodiments are contemplated, disclosed, and claimed.

Claims21

Dependent claims

A process for cleaning a silicon electrode, the process comprising:

soaking the silicon electrode in an aqueous detergent solution, wherein the aqueous detergent solution comprises metal cations such that the aqueous detergent solution has a metal cation concentration of less than about 200 ppm;
rinsing the silicon electrode with water following removal from the aqueous detergent solution;
soaking the silicon electrode in an isopropyl alcohol (IPA) solution;
rinsing the silicon electrode with water following removal from the IPA solution;
subjecting the silicon electrode to a first ultrasonic cleaning operation in water following removal from the IPA solution;
removing contaminants from the silicon electrode by soaking the silicon electrode in an agitated mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water and by rinsing the acid-soaked silicon electrode with water;
subjecting the silicon electrode to an additional ultrasonic cleaning operation in water following removal from the mixed acid solution;
and
rinsing and drying silicon electrode following the additional ultrasonic cleaning operation.

6 more elements

A process for cleaning a silicon electrode, the process comprising:

soaking the silicon electrode in an aqueous detergent solution, wherein the aqueous detergent solution comprises metal cations such that the aqueous detergent solution has a metal cation concentration of less than about 200 ppm;
rinsing the silicon electrode with water following the detergent soaking operation;
subjecting the silicon electrode to an ultrasonic cleaning operation in water prior to soaking the silicon electrode in an agitated mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water;
rinsing the acid-soaked silicon electrode with water;
subjecting the silicon electrode to an additional ultrasonic cleaning operation in water following removal from the mixed acid solution;
and
rinsing and drying silicon electrode following the additional ultrasonic cleaning operation.

4 more elements

Dependencies are inferred from the claim text.

Immersive oxidation and etching process for cleaning silicon electrodes

Life of this patent

Immersive oxidation and etching process for cleaning silicon electrodes

Life of this patent

Abstract

Claims21