Perovskite-type oxide film, piezoelectric thin-film device and liquid ejecting device using perovskite-type oxide film, as well as production process and evaluation method for perovskite-type oxide film

A process for producing a perovskite-type oxide film, comprising the steps of:

• depositing a perovskite-type oxide film having a perovskeite-type crystal structure and containing lead as a chief component by sputtering;
• annealing the oxide film deposited at a specified temperature for a specified period of time;
• subjecting the oxide film after annealing to Raman microspectroscopy at a plurality of points on a surface thereof so as to measure Raman spectra upon application of an electric field of 100 kV/cm and upon application of no electric field;
• finding conditions under which a mean of absolute values of peak shift amounts is 2.2 cm−1 or less, with the peak shift amounts being found between Raman spectra in a range of 500 to 650 cm−1 measured upon application of an electric field of 100 kV/cm and Raman spectra in the range of 500 to 650 cm−1 measured upon application of no electric field;
• and
• producing the perovskite-type oxide film under the conditions found.

A method of evaluating a perovskite-type oxide film, comprising the steps of:

• subjecting a perovskite-type oxide film having a perovskeite-type crystal structure and containing lead as a chief component to Raman microspectroscopy at a plurality of points thereon so as to measure Raman spectra upon application of an electric field of 100 kV/cm and upon application of no electric field;
• determining whether or not a mean of absolute values of peak shift amounts is 2.2 cm−1 or less, with the peak shift amounts being found between Raman spectra in a range of 500 to 650 cm−1 measured upon application of an electric field of 100 kV/cm and Raman spectra in the range of 500 to 650 cm−1 measured upon application of no electric field;
• and
• evaluating the perovskite-type oxide film as capable of relieving stress localized during application of an electric field to the film if the mean of the absolute values of the peak shift amounts is 2.2 cm−1 or less.