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US 8,063,338 B2Granted
Enhancing the width of polycrystalline grains with mask
AssigneeThe Trustees of Columbia in the City of New York
InventorJames S. Im
Life of this patent
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Abstract
A system, method and masking arrangement are provided of enhancing the width of polycrystalline grains produced using sequential lateral solidification using a modified mask pattern is disclosed. One exemplary mask pattern employs rows of diamond or circular shaped areas in order to control the width of the grain perpendicular to the direction of primary crystallization.
Claims24
A masking arrangement for processing a thin film sample comprising:
- a first section which includes at least one opaque area arranged in a first pattern, the first section is configured to receive at least one beam pulse thereon, and produce at least one first modified pulse when the at least one beam pulse is passed therethrough, the at least one first modified pulse including at least one first portion having a pattern that corresponds to the first pattern of the first section, wherein, when the first portion is irradiated on the sample, at least one first region of the sample is prevented from being completely melted throughout its thickness;
- and
- a second section associated with the first section, the second section including a further area arranged in a second pattern, the second section being configured to receive at least one further beam pulse thereon, and produce at least one second modified pulse when the at least one further beam pulse is passed therethrough, the at least one second modified pulse including at least one second portion having a pattern that corresponds to the second pattern of the second section, wherein, when the second portion is irradiated on the sample, at least one second region of the sample irradiated by the second portion is completely melted throughout its thickness,
- wherein when the first region is irradiated by the at least one second modified pulse, the second portion of the at least one second modified pulse completely melts the at least one first region throughout its thickness.
1 more element
A method for processing a thin film sample, comprising the steps of:
- providing at least one beam on a first section of a masking arrangement to produce at least one first modified pulse when the at least one beam is passed therethrough, the first section which includes at least one opaque area arranged in a first pattern, the at least one first modified pulse including at least one first portion having a pattern that corresponds to the first pattern, wherein, when the first portion is irradiated on the sample, at least one first region of the sample is prevented from being completely melted throughout its thickness;
- based on the dimensions of the masking arrangement, translating at least one of the thin film sample and the beam relative to the other one of the thin film sample and the beam;
- and
- providing at least one further beam on a second section of a masking arrangement to produce at least one second modified pulse when the at least one further beam is passed therethrough, the second section associated with the first section, the second section including a further area arranged in a second pattern, the at least one second modified pulse including at least one second portion having a pattern that corresponds to the second pattern, wherein, when the second portion is irradiated on the sample, at least one second region of the sample irradiated by the second portion is completely melted throughout its thickness;
- wherein, when the first region is irradiated by the at least one second modified pulse, the second portion of the at least one second modified pulse completely melts the at least one first region throughout its thickness.
2 more elements
A system for processing a thin film sample, comprising:
- a mask,
- a processor to activate a device to irradiate through the mask, the processor being configured to perform the steps of:
- providing at least one beam on a first section of a masking arrangement to produce at least one first modified pulse when the at least one beam is passed therethrough, the first section which includes at least one opaque area arranged in a first pattern, the at least one first modified pulse including at least one first portion having a pattern that corresponds to the first pattern, wherein, when the first portion is irradiated on the sample, at least one first region of the sample is prevented from being completely melted throughout its thickness,
- based on the dimensions of the masking arrangement, translating at least one of the thin film sample and the beam relative to the other one of the thin film sample and the beam, and
- providing at least one further beam on a second section of a masking arrangement to produce at least one second modified pulse when the at least one further beam is passed therethrough, the second section associated with the first section, the second section including a further area arranged in a second pattern, the at least one second modified pulse including at least one second portion having a pattern that corresponds to the second pattern, wherein, when the second portion is irradiated on the sample, at least one second region of the sample irradiated by the second portion is completely melted throughout its thickness;
- wherein, when the first region is irradiated by the at least one second modified pulse, the second portion of the at least one second modified pulse completely melts the at least one first region throughout its thickness.
3 more elements
Dependencies are inferred from the claim text.