Process for group III-V semiconductor nanostructure synthesis and compositions made using same

A method for production of Group III-V semiconductor nanostructures, the method comprising:

• providing one or more surfactants;
• providing a first precursor comprising a Group V atom;
• providing a second precursor comprising a tricarboxylate substituted Group III atom;
• heating the one or more surfactants to a first temperature;
• contacting the first and second precursors and the one or more heated surfactants, whereby the first and second precursors react to form nuclei capable of nucleating nanostructure growth;
• and,
• maintaining the first and second precursors, the one or more surfactants, and the nuclei at a second temperature, the second temperature permitting growth of the nuclei to produce the nanostructures, whereby the first and second precursors react to grow the nanostructures from the nuclei.