High-rate groove pattern
AssigneeRohm and Haas Electronic Materials CMP Holdings, Inc.
InventorGregory P. Muldowney
Life of this patent
Estimating the term…
Abstract
The invention provides a polishing pad useful for polishing at least one of a magnetic, optical and semiconductor substrate in the presence of a polishing medium with a polishing pad. The polishing pad comprises a center, an inner region surrounding the center, a transition region connecting grooves from the inner region to an outer region surrounding the inner region. The outer region has multiple grooves with a high-rate path. The transition region is adjacent the outer region and within a radius from the center defined as follows: r TR = 0.7 r * to 1.3 r * where r * = R C ( R R C ) 2 - cos ( 2 θ c 0 ) - sin ( 2 θ c 0 ) ( R / R C cos θ c 0 ) 2 - 1 ; with the inner region originating continuous grooves that extend uninterrupted to the outer region.
Claims10
A polishing pad useful for polishing at least one of a magnetic, optical and semiconductor substrate in the presence of a polishing medium with a polishing pad, the polishing pad comprising:
- a center,
- an inner region surrounding the center,
- a transition region connecting grooves from the inner region to an outer region surrounding the inner region, the outer region having multiple grooves, the multiple grooves having a high-rate path, at least fifty percent of the high-rate path being within twenty percent of a groove trajectory φ(r) in polar coordinates referenced to the concentric center of the polishing pad and defined in terms of (1) the distance R between the concentric center of the polishing pad and the rotational center of the substrate being polished, (2) the radius Rc of the carrier fixture, and (3) the local angle θc0 of grooves in the carrier fixture, defined with a groove equation as follows:
- ϕ
-
- (
- r
- )
- =
- ∫
- R
- -
- R
- C
- r
-
- R
- R
- C
-
- sin
-
-
- ϕ
- c
- +
- (
- tan
-
-
- θ
- c
-
-
- 0
- )
-
- (
- R
- R
- C
-
- cos
-
-
- ϕ
- c
- +
- 1
- )
- (
- R
- R
- C
-
- cos
-
-
- ϕ
- c
- +
- 1
- )
- -
- (
- tan
-
-
- θ
- c
-
-
- 0
- )
-
- R
- R
- C
-
- sin
-
-
- ϕ
- c
-
-
- ⅆ
- r
- ′
- r
- ′
- where
- ϕ
- c
- =
- cos
- -
- 1
- (
- R
- 2
- +
- R
- C
- 2
- -
- r
- 2
- 2
-
- RR
- C
- )
- -
- π
- for
-
-
- values
-
-
- of
-
-
- r
-
-
- from
-
-
- (
- R
- -
- R
- C
- )
-
-
- to
-
-
- (
- R
- +
- R
- C
- )
- the transition region being adjacent the outer region and within a radius from the center defined as follows:
- r
- TR
- =
- 0.7
-
- r
- *
-
-
- to
-
-
- 1.3
-
- r
- *
- where
- r
- *
- =
- R
- C
-
- (
- R
- R
- C
-
- )
- 2
- -
- cos
-
- (
- 2
-
- θ
- c
-
-
- 0
- )
- -
- sin
-
-
- (
- 2
-
-
- θ
- c
-
-
- 0
- )
-
- (
- R
- /
- R
- C
- cos
-
-
- θ
- c
-
-
- 0
- )
- 2
- -
- 1
- ;
- and wherein the inner region originates continuous grooves that extend uninterrupted to the outer region.
A polishing pad useful for polishing at least one of a magnetic, optical and semiconductor substrate in the presence of a polishing medium with a polishing pad, the polishing pad comprising:
- a center,
- an inner region surrounding the center,
- a transition region connecting grooves from the inner region to an outer region surrounding the inner region, the outer region having multiple grooves, the multiple grooves having a high-rate path, at least fifty percent of the high-rate path being within ten percent of a groove trajectory φ(r) in polar coordinates referenced to the concentric center of the polishing pad and defined in terms of (1) the distance R between the concentric center of the polishing pad and the rotational center of the substrate being polished, (2) the radius Rc of the carrier fixture, and (3) the local angle θc0 of grooves in the carrier fixture, defined with a groove equation as follows:
- ϕ
-
- (
- r
- )
- =
- ∫
- R
- -
- R
- C
- r
-
- R
- R
- C
-
-
- sin
-
-
- ϕ
- c
-
- +
- (
- tan
-
-
- θ
- c
-
-
- 0
- )
-
- (
- R
- R
- C
-
- cos
-
-
- ϕ
- c
- +
- 1
- )
- (
- R
- R
- C
-
- cos
-
-
- ϕ
- c
- +
- 1
- )
- -
- (
- tan
-
-
- θ
- c
-
-
- 0
- )
-
- R
- R
- C
-
- sin
-
-
- ϕ
- c
-
- ⅆ
- r
- ′
- r
- ′
- where
- ϕ
- c
- =
- cos
- -
- 1
- (
- R
- 2
- +
- R
- C
- 2
- -
- r
- 2
- 2
-
- RR
- C
- )
- -
- π
- for
-
-
- values
-
-
- of
-
-
- r
-
-
- from
-
-
- (
- R
- -
- R
- C
- )
-
-
- to
-
-
- (
- R
- +
- R
- C
- )
- the transition region being adjacent the outer region and within a radius from the center defined as follows:
- r
- TR
- =
- 0.8
-
- r
- *
-
-
- to
-
-
- 1.2
-
- r
- *
- where
- r
- *
- =
- R
- C
-
- (
- R
- R
- C
- )
- 2
- -
- cos
-
- (
- 2
-
- θ
- c
-
-
- 0
- )
- -
- sin
-
-
- (
- 2
-
-
- θ
- c
-
-
- 0
- )
-
- (
- R
- /
- R
- C
- cos
-
-
- θ
- c
-
-
- 0
- )
- 2
- -
- 1
- ;
- and wherein the inner region originates continuous grooves that extend uninterrupted to the outer region and the transition region has an AreaGroove/AreaTotal of 25 to 75 percent.
Dependencies are inferred from the claim text.