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US 8,058,663 B2Granted
Micro-emitter array based full-color micro-display
AssigneeIII-N Technology, Inc.
InventorsZhaoyang Fan, Jing Li, Jingyu Lin, Hongxing Jiang
Life of this patent
Estimating the term…
Abstract
Disclosed is a semiconductor micro-emitter array for use in a full-color microdisplay. Each pixel includes three vertically-stacked red, green, and blue micro-emitters which minimizes pixel size. The microdisplay may be exclusively based on Group III-nitride semiconductors, with differing indium concentrations in three respective InGaN/GaN active regions for emitting the three RGB colors. Alternatively the microdisplay may be based on hybrid integration of InGaN based III-nitride semiconductors for blue and green emissions, and AlGaInP based (e.g., Group III-V) semiconductors for red emissions.
Claims11
A pixel for use in a multicolor illumination device, said pixel comprising:
- a red emitter;
- a green emitter;
- and
- a blue emitter for generating a blue light emission;
- said red, green, and blue emitters being substantially vertically stacked one on top of the other onto a substrate, and
- wherein both of said green and blue emitters are caused to be transparent relative to a red light emission from said red emitter, and said blue emitter is caused to be transparent relative to a green light emission from said green emitter;
- wherein said substrate is transparent to all of said red, green, and blue light emissions;
- and
- wherein said pixel structure comprises:
- (i) a buffer layer deposited on said substrate;
- (ii) a first n-GaN layer deposited above said buffer layer;
- (iii) a first InGaN/GaN multi-quantum well (MQW) active region deposited above said first n-GaN layer, said first InGaN/GaN MQW active region being adapted to generate said blue emissions;
- (iv) a first p-GaN layer deposited above said first InGaN/GaN MQW active region;
- (v) an at least semi-insulative layer deposited above said first p-GaN layer;
- (vi) a second p-GaN layer deposited above said at least semi-insulative layer;
- (vii) a second InGaN/GaN MQW active region deposited above said second p-GaN layer, said second InGaN/GaN MQW active region adapted generate said green emissions;
- (viii) a second n-GaN layer deposited above said second InGaN/GaN MQW active region;
- (ix) a third InGaN/GaN MQW active region deposited above said second n-GaN layer, said third InGaN/GaN MQW active region adapted to generate said red emissions;
- and
- (x) a third p-GaN layer deposited above said third InGaN/GaN MQW active region.
17 more elements
A pixel for use in a multicolor illumination device, said pixel comprising:
- a red emitter;
- a green emitter;
- and
- a blue emitter for generating a blue light emission;
- said red, green, and blue emitters being substantially vertically stacked one on top of the other onto a substrate, and wherein both of said green and blue emitters are caused to be transparent relative to a red light emission from said red emitter, and said blue emitter is caused to be transparent relative to a green light emission from said green emitter;
- wherein said pixel is comprised of a hybrid integration of Group III-nitride semiconductors and Group III-V semiconductors;
- wherein said green, and blue emitters are comprised of InGaN-based structures and said red emitter is comprised of AlGaInP-based structures;
- wherein said substrate is transparent to said blue, green, and red emissions, and said pixel has structures comprising:
- a buffer layer on said substrate;
- a first n-GaN layer above said buffer layer;
- a blue emission layer above said first n-GaN layer;
- a first p-GaN layer above said blue emission layer;
- a green emission layer above said first p-GaN layer;
- a second n-GaN layer above said green emission layer;
- an electrically-isolating layer above said second n-GaN layer, said electrically-isolating layer insulating between said InGaN-based structures and said AlGaInP-based structures;
- a current-spreading layer above said electrically-isolating layer;
- a p-AlGaInP layer above said current-spreading layer;
- a red-emission layer above said p-AlGaInP layer;
- and
- an n-AlGaInP layer above said red-emission layer.
17 more elements
A pixel for use in a multicolor illumination device, said pixel comprising:
- a red emitter;
- a green emitter;
- and
- a blue emitter for generating a blue light emission;
- said red, green, and blue emitters being substantially vertically stacked one on top of the other onto a substrate, and wherein both of said green and blue emitters are caused to be transparent relative to a red light emission from said red emitter, and said blue emitter is caused to be transparent relative to a green light emission from said green emitter;
- wherein said pixel is comprised of a hybrid integration of Group III-nitride semiconductors and Group III-V semiconductors;
- wherein said green, and blue emitters are comprised of InGaN-based structures and said red emitter is comprised of AlGaInP-based structures;
- the device further comprising:
- an electrical connection made between a first n-contact associated with said AlGaInP-based structures and a second n-contact, said second n-contact being deposited on an n-GaN layer which is deposited between a green emissive layer and a blue emissive layer;
- said n-GaN layer, green emissive layer, and blue emissive layer all being included in said InGaN-based structures;
- said first and second contacts together creating a common-grounded anode;
- a first cathode associated with and electrically controlling said red emitter;
- a second cathode associated with and electrically controlling said green emitter;
- and
- a third cathode associated with and electrically controlling said blue emitter.
12 more elements
A pixel for use in a multicolor illumination device, said pixel comprising:
- a red emitter;
- a green emitter;
- and
- a blue emitter for generating a blue light emission;
- said red, green, and blue emitters being substantially vertically stacked one on top of the other onto a substrate, and
- wherein both of said green and blue emitters are transparent relative to a red light emission from said red emitter, and said blue emitter is transparent relative to a green light emission from said green emitter;
- wherein said pixel structure comprises:
- (i) a buffer layer deposited on said substrate;
- (ii) a first n-GaN layer deposited above said buffer layer;
- (iii) a first InGaN/GaN multi-quantum well (MQW) active region disposed in electrical contact with said first n-GaN layer, said first InGaN/GaN MQW active region being adapted to generate said blue emissions;
- (iv) a first p-GaN layer disposed in electrical contact with said first InGaN/GaN MQW active region;
- (v) an at least semi-insulative layer deposited above said first p-GaN layer;
- (vi) a second p-GaN layer deposited above said at least semi-insulative layer;
- (vii) a second InGaN/GaN MQW active region disposed in electrical contact with said second p-GaN layer, said second InGaN/GaN MQW active region adapted generate said green emissions;
- (viii) a second n-GaN layer disposed in electrical contact with said second InGaN/GaN MQW active region;
- (ix) a third InGaN/GaN MQW active region disposed in electrical contact with said second n-GaN layer, said third InGaN/GaN MQW active region adapted to generate said red emissions;
- and
- (x) a third p-GaN layer disposed in electrical contact with said third InGaN/GaN MQW active region.
15 more elements
A pixel for use in a multicolor illumination device, said pixel comprising:
- a red emitter;
- a green emitter;
- and
- a blue emitter for generating a blue light emission;
- said red, green, and blue emitters being substantially vertically stacked one on top of the other onto a substrate, and wherein both of said green and blue emitters are caused to be transparent relative to a red light emission from said red emitter, and said blue emitter is caused to be transparent relative to a green light emission from said green emitter;
- wherein said pixel is comprised of a hybrid integration of Group III-nitride semiconductors and Group III-V semiconductors;
- wherein said green, and blue emitters are comprised of InGaN-based structures and said red emitter is comprised of AlGaInP-based structures;
- wherein said substrate is transparent to said blue, green, and red emissions, and said pixel has structures comprising:
- a buffer layer on said substrate;
- a first Group III-Nitride layer above said buffer layer;
- a blue emission layer disposed adjacent to said first Group-III-Nitride layer;
- a third Group III-Nitride layer disposed adjacent to said blue emission layer;
- a green emission layer disposed adjacent to said first Group-III-Nitride layer;
- a second Group-III-Nitride layer above said green emission layer;
- an electrically-isolating layer disposed adjacent to said second Group-III-Nitride layer, said electrically-isolating layer insulating between said InGaN-based structures and said AlGaInP-based structures;
- a current-spreading layer disposed adjacent to said electrically-isolating layer;
- a first AlGaInP layer disposed adjacent to said current-spreading layer;
- a red-emission layer disposed adjacent to said AlGaInP layer;
- and
- an second AlGaInP layer disposed adjacent to said red-emission layer.
17 more elements
Dependencies are inferred from the claim text.