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US 8,058,117 B2Granted
Method of synthesizing silicon wires
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsYuan Yao, Li-Guo Xu, Shou-Shan Fan
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Abstract
A method of synthesizing silicon wires is provided. A substrate is provided. A copper catalyst particle layer is formed on a top surface of the substrate. The reactive device is heated at a temperature of above 450° C. in a flowing protective gas. A mixture of a protective gas and a silicon-based reactive gas is introduced at a temperature above 450° C. at a pressure below 700 Torr to form the silicon wires on the substrate.
Claims11
A method of synthesizing silicon wires comprising:
- providing a substrate;
- depositing a copper layer on a top surface of the substrate;
- annealing the substrate with the copper layer for a period time sufficient to oxidize the copper layer and to form a copper oxide particle layer;
- reducing the copper oxide particle layer into a copper particle layer, thereby forming the copper catalyst particle layer on the substrate;
- and
- heating the substrate with the copper catalyst particle layer thereon and introducing a protective gas and a silicon-based reactive gas at conditions including a temperature above about 450° C. and a pressure below about 700 Torr to form the silicon wires on the substrate.
3 more elements
A method of synthesizing silicon wires comprising:
- providing a substrate;
- depositing a copper layer on a top surface of the substrate;
- annealing the substrate with the copper layer in air at a temperature of about 300° C. to about 400° C. for a period time sufficient to oxidize the copper layer and to form a copper oxide particle layer;
- heating the substrate up to a temperature above 500° C. in flowing protective gas to reduce the copper oxide particle layer into a copper particle layer, thereby forming the copper catalyst particle layer on the substrate;
- and
- heating the substrate with the copper catalyst particle layer thereon and introducing a protective gas and a silicon-based reactive gas at conditions including a temperature above about 450° C. and a pressure below about 700 Torr to form the silicon wires on the substrate.
3 more elements
Dependencies are inferred from the claim text.