Memory device employing dual clocking for generating systematic code and method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsHoe-ju Chung, Youn-Cheul Kim
Life of this patent
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Abstract
A memory device may include a memory core block, a data patch unit, a Cyclic Redundancy Check (CRC) generating unit, and/or a serializer. The data patch unit may be configured to patch parallel data read from the memory core block in response to a first read pulse. The CRC generating unit may be configured to generate the CRC code based on the parallel data in response to a second read pulse, the second read pulse delayed by a period of time from if the first read pulse is generated. The serializer may be configured to convert the parallel data to serial data in response to the first read pulse, and/or arrange the CRC code in a order for a number of bits of the serial data to generate a systematic code.
Claims22
A memory device, comprising:
- a memory core block;
- a data patch unit configured to patch parallel data read from the memory core block in response to a first read pulse;
- a Cyclic Redundancy Check (CRC) generating unit configured to generate a CRC code based on the parallel data in response to a second read pulse, the second read pulse delayed by a period of time from if the first read pulse is generated;
- and
- a serializer configured to convert the parallel data to serial data in response to the first read pulse, and arrange the CRC code in a order for a number of bits of the serial data to generate a systematic code.
A memory device, comprising:
- at least a first bank divided between at least first and second memory cell array blocks, the first memory cell array block included in a first memory core block and the second memory cell array block included in a second memory core block;
- a first data patch unit configured to patch first parallel data read from the first memory core block in response to a first data patch pulse and output the first parallel data as first patch data;
- a first Cyclic Redundancy Check (CRC) generator configured to generate a plurality of first CRC values based on the first patch data and a plurality of second CRC values;
- a second data patch unit configured to patch second parallel data read from the second memory core block in response to a second data patch pulse and output the second parallel data as second patch data;
- a second CRC generator configured to generate the plurality of second CRC values based on the second patch data and the plurality of first CRC values;
- a first serializer configured to convert the first patch data to first serial data in response to the first data patch pulse, convert the plurality of first CRC values to a plurality of first CRC bits in response to a delayed second data patch pulse, and arrange the plurality of first CRC bits in a order for a number of bits of the first serial data to generate a first systematic code;
- and
- a second serializer configured to convert the second patch data to second serial data in response to the second data patch pulse, convert the plurality of second CRC values to a plurality of second CRC bits in response to a delayed first data patch pulse, and arrange the plurality of CRC bits in a order for a number of bits of the second serial data to generate a second systematic code.
A method, comprising:
- patching parallel data read from a memory core block in response to a first read pulse;
- generating a second read pulse delayed by a period of time from if the first read pulse is generated;
- generating the CRC code based on the parallel data in response to the second read pulse;
- and
- converting the parallel data to serial data in response to the first read pulse, and arranging the CRC code in a order for a number of bits of the serial data to generate a systematic code.
A method, comprising:
- patching first parallel data read from a first memory core block in response to a first data patch pulse and outputting the first parallel data as first patch data, the first memory core block including a first memory cell array block included in at least a first bank divided between the first memory cell array block and a second memory cell array block, the second memory cell array block included in a second memory core block;
- patching second parallel data read from the second memory core block in response to a second data patch pulse and outputting the second parallel data as second patch data;
- generating a plurality of first CRC values based on the first patch data and a plurality of second CRC values;
- generating the plurality of second CRC values based on the second patch data and the plurality of first CRC values;
- converting the first patch data to first serial data in response to the first data patch pulse, converting the plurality of first CRC values to a plurality of first CRC bits in response to a delayed second data patch pulse, arranging the plurality of first CRC bits in a order for a number of bits of the first serial data to generate a first systematic code;
- and
- converting the second patch data to second serial data in response to the second data patch pulse, converting the plurality of second CRC values to a plurality of second CRC bits in response to a delayed first data patch pulse, and arranging the plurality of second CRC bits in a order for a number of bits of the second serial data to generate a second systematic code.
Dependencies are inferred from the claim text.