Data writing method for flash memory, and flash memory controller and storage device thereof
AssigneePhison Electronics Corp.
InventorsChien-Hua Chu, Wei-Chen Teo
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AssigneePhison Electronics Corp.
InventorsChien-Hua Chu, Wei-Chen Teo
Estimating the term…
A data writing method for a block of a multi level cell NAND flash memory including upper page addresses and lower page addresses is provided, wherein a writing speed at the lower page addresses is higher than that at the upper page addresses. The data writing method includes receiving a writing command and determining whether an address to be written with new data in the writing command is the upper page address of the block. The method also includes copying old data previously recorded on the lower page addresses of the block as an old data backup when the address to be written in the writing command is the upper page address of the block and then writing the new data to the address to be written. Thus, old data may be protected while writing data to the upper page address of the multi level cell NAND flash memory.
A data writing method suitable for a block of a multi level cell NAND flash memory, wherein the block comprises a plurality of upper page addresses and a plurality of lower page addresses respectively corresponding to the upper page addresses at which a writing speed is higher than that at the upper addresses, the data writing method comprising:
A flash memory controller suitable for a storage device with a multi level cell NAND flash memory, wherein a block of the multi level cell NAND flash memory comprises a plurality of upper page addresses and a plurality of lower page addresses respectively corresponding to the upper page addresses at which a writing speed is higher than that at the upper addresses, the flash memory controller comprising:
A flash memory storage device, comprising:
Dependencies are inferred from the claim text.