Self aligned diode fabrication method and self aligned laser diode
AssigneeCree, Inc.
InventorYong Ma
Life of this patent
Estimating the term…
Abstract
A method for fabricating a laser diode comprising providing a laser diode epitaxial structure and depositing a metal layer stack on the epitaxial structure, the stack comprising a contact and sacrificial layer. A ridge is formed in the laser diode epitaxial structure, the stack being the mask forming the ridge. An insulating layer is deposited over the ridge and at least a portion of the sacrificial layer is removed. At least a portion of the insulating thin film at the top of the stack is also removed. A pad metal is deposited in electrical contact with the contact and is insulated from the ridge and laser diode epitaxial structures by the insulating layer.
Claims16
A laser diode, comprising:
- a laser diode epitaxial structure comprising a ridge with mesas on the sides of said ridge, said ridge having a top surface and side surfaces, said ridge comprising a metal p-contact and a protection layer on said p-contact;
- an insulating layer covering said side surfaces of said ridge;
- and
- a pad metal on said insulating layer and in electrical contact with said p-contact through said top surface of said ridge, said pad metal on said side surfaces of said ridge and insulated from said side surfaces of said ridge by said insulating layer.
A laser diode, comprising:
- a laser diode epitaxial structure comprising a ridge having a top surface and side surface, said ridge comprising a metal p-contact and a means for protecting said p-contact during fabrication of said diode;
- an insulating thin film on said laser diode epitaxial structure at least a portion of said top surface of said ridge not covered by said insulating thin film;
- and
- a pad metal on said laser diode epitaxial structure, said pad metal in electrical contact with said p-contact through said top surface of said ridge, said pad metal electrically insulated from said side surfaces of said ridge by said insulating thin film.
A solid state emitter, comprising:
- an epitaxial structure comprising a ridge with mesas on the sides of said ridge, said ridge having a top surface and side surfaces;
- a p-contact on said ridge;
- an insulating layer covering said side surfaces of said ridge and no more than a portion of said top surface of said ridge;
- and
- a pad metal on said insulating layer and in electrical contact with said p-contact through said top surface of said ridge, said pad metal running from one of said side surfaces, over said top surface to another of said side surfaces, and insulated from said side surfaces of said ridge and said mesas by said insulating layer.
Dependencies are inferred from the claim text.