Programming method and memory device using the same
AssigneeMacronix International Co., Ltd.
InventorsChun-Hsiung Hung, Hsin-Yi Ho
Life of this patent
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Abstract
A programming method applied to a memory is provided. The memory includes a number of memory cells. The method includes the following steps. A target cell of the memory cells is programmed in response to a first programming command. The target cell is programmed in response to a second programming command.
Claims20
A programming method of a memory comprising a plurality of memory cells, in a case when a data is to be stored into a target cell of the memory cells, the method comprising the steps of:
- performing a first programming operation to program the target cell of the memory cells;
- and
- performing a second programming operation to program the target cell again.
A memory device, comprising:
- a plurality of memory cells;
- and
- a control circuit for, in a case when a data is to be stored into a target cell of the memory cells, performing a first programming to program the target cell of the memory cells, and then performing a second programming operation to program the target cell again.
A programming method applied to a memory, the memory comprising a plurality of memory cells, the method comprising the steps of:
- changing a first cell of the memory cells from a low threshold voltage to a high threshold voltage;
- and
- programming a second cell adjacent to the first cell after the step of changing the first cell.
Dependencies are inferred from the claim text.