Assisting write operations to data storage cells

A method of storing data comprising the steps of:

• powering a feedback loop for storing said data value in at least one storage cell with a higher voltage and a lower voltage;
• receiving a data value;
• in response to receipt of said data value, generating a pulse signal
• in response to said pulse signal, providing a discharge path between said high voltage level and a lower voltage level and thereby generating a reduced internal voltage level from a high voltage level supplied from a power supply for a period dependent on a width of said pulse signal, said reduced internal voltage level being lower than said high voltage level, such that when powered said feedback loop receives said reduced internal voltage level as said higher voltage for said period determined by a pulse width and said high voltage level at other times;
• and
• storing said received data value in said storage cell during said pulse period.

A means for storing data comprising:

• an input means for receiving a data value;
• at least one storage means comprising:
• a feedback loop for storing said data value;
• an output means for outputting said stored data value;
• said feedback loop receiving a higher voltage and a lower voltage as power supply, said data store further comprising:
• a voltage supply means for powering said data store, said voltage supply outputting a high voltage level and a low voltage level;
• write assist means arranged between said voltage supply means and said at least one storage means, said write assist means being responsive to a pulse signal to provide a discharge path between said high voltage level and a lower voltage level to generate a reduced internal voltage level from said high voltage level for a period dependent on a width of said pulse signal, said reduced internal voltage level being lower than said high voltage level, such that when powered said feedback loop receives said reduced internal voltage level as said higher voltage for said period determined by said pulse width and said high voltage level at other times;
• and
• pulse signal generation means for generating said pulse signal in response to a write request sent to said at least one storage cell.