Data output circuit in a semiconductor memory apparatus
AssigneeHynix Semiconductor Inc.
InventorJong Yeol Yang
Life of this patent
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Abstract
A data output circuit in a semiconductor memory apparatus includes a pre-driver configured to receive input data and then produce a pull-up signal and a pull-down signal, a pull-up driver configured to pull-up drive a first node in response to the pull-up signal and provide an additional pull-up drive when a voltage level on the first node transitions, a pull-down driver configured to pull-down drive a second node in response to the pull-down signal and provide an additional pull-down drive when a voltage level on the second node transitions, and a pad coupled to the first and second nodes to generate output data.
Claims21
A data output circuit in a semiconductor memory apparatus comprising:
- a pre-driving unit configured to produce a pull-up signal and a pull-down signal in response to input data;
- a pull-up driving unit configured to pull-up drive a first node in response to the pull-up signal and provide an additional pull-up drive when a voltage level of the first node transitions;
- a pull-down driving unit configured to pull-down drive a second node in response to the pull-down signal and provide an additional pull-down drive when a voltage level of the second node transitions;
- and
- a pad coupled to the first and second nodes to generate output data,
- wherein
- the pull-up driving unit includes a first main driver configured to pull-up drive the first node in response to the pull-up signal and a first sub driver configured to pull-up drive the first node when the voltage level of the first node transitions,
- the first sub driver includes a first switching unit configured to produce a first sub driving signal in response to the pull-up signal and a first driver configured to pull-up drive the first node in response to the first sub driving signal, and
- the first switching unit includes a first tri-state inverter which is configured to produce the first sub driving signal using an inverted signal of the voltage level on the first node.
A data output circuit in a semiconductor memory apparatus comprising:
- a pre-driving unit configured to produce a pull-up signal and a pull-down signal in response to input data;
- a first switching unit configured to produce an inverted signal of a voltage level on a first node in response to the pull-up signal;
- a pull-up driving unit configured to pull-up drive the first node in response to the pull-up signal and additionally pull-up drive the first node in response to an output signal of the first switching unit;
- a second switching unit configured to produce an inverted signal of a voltage level on a second node in response to the pull-down signal;
- a pull-down driving unit configured to pull-down drive the second node in response to the pull-down signal and additionally pull-down drive the second node in response to an output signal of the second switching unit;
- and
- a pad coupled to the first and second nodes to generate output data.
A data output circuit in a semiconductor memory apparatus comprising:
- a pre-driving unit configured to generate a pull-up signal in response to input data;
- a main driver configured to pull-up drive an output node in response to the pull-up signal;
- a tri-state inverter configured to generate a sub driving signal in response to a voltage level of the output node when the tri-state inverter is activated by the pull-up signal;
- and
- a sub driver configured to pull-up drive the output node in response to the sub driving signal.
A data output circuit in a semiconductor memory apparatus comprising:
- a pre-driving unit configured to generate a pull-down signal in response to input data;
- a main driver configured to pull-down drive an output node in response to the pull-down signal;
- a tri-state inverter configured to generate a sub driving signal in response to a voltage level of the output node when the tri-state inverter is activated by the pull-down signal;
- and
- a sub driver configured to pull-down drive the output node in response to the sub driving signal.
Dependencies are inferred from the claim text.