Word line driving circuit, semiconductor memory device including the same, and method for testing the semiconductor memory device
AssigneeHynix Semiconductor Inc.
InventorChang-Ho Do
Life of this patent
Estimating the term…
Abstract
A semiconductor memory device in accordance with the present invention is able to facilitate detecting whether a word line fails or not by floating the word line. The semiconductor memory device includes a word line driver, and a floating controller. The word line driver is configured to control a word line to be enabled/disabled. The floating controller is configured to control the word line driver to float the word line in response to a word line floating signal.
Claims22
A dynamic random access memory, comprising:
- a word line driver configured to control a word line to be enabled/disabled;
- and
- a floating controller configured to control the word line driver to float the word line in response to a word line floating signal, wherein the word line floating signal is activated after the lapse of a predetermined time from generation of an active command in a test mode, and deactivated by generation of a precharge command, and wherein a write operation is performed when the word line is floated, and
- wherein no fixed voltage is applied to the word line when the word line is floated.
A word line driving circuit of dynamic random access memory, comprising:
- a word line driver configured to drive a word line by supplying a high voltage or a low voltage to the word line;
- and
- a floating controller configured to control the word line driver to prevent the high voltage or the low voltage from being supplied to the word line in response to a word line floating signal, wherein the word line floating signal is activated after the lapse of a predetermined time from generation of an active command in a test mode, and deactivated by generation of a precharge command, and wherein a write operation is performed when the word line is floated, and
- wherein no fixed voltage is applied to the word line when the word line is floated.
A method for testing a dynamic random access memory, the method comprising:
- floating a word line in response to a word line floating signal, wherein the word line floating signal is activated after the lapse of a predetermined time subsequent to generation of an active command in a test mode, and deactivated by generation of a precharge command, wherein no fixed voltage is applied to the word line when the word line is floated;
- writing data to the floated word line;
- and
- reading the data of the word line.
A dynamic random access memory, comprising:
- a word line floating signal generator configured to generate a word line floating signal for floating a word line, wherein the word line floating signal is activated after the lapse of a predetermined time from generation of an active command in a test mode, and deactivated by generation of a precharge command;
- and
- a word line configured to be floated in response to the word line floating signal, wherein a write operation is performed when the word line is floated, and
- wherein no fixed voltage is applied to the word line when the word line is floated.
A dynamic random access memory, comprising:
- a phi X driver configured to output a phi X control signal having an address signal in response to a selection signal for selecting a sub word line;
- a sub word line driver configured to drive the sub word line in response to a main word line signal, the selection signal and the phi X control signal;
- and
- a floating controller configured to prevent a power voltage from being applied to the phi X driver in response to a word line floating signal, wherein the word line floating signal is activated after the lapse of a predetermined time from generation of an active command in a test mode, and deactivated by generation of a precharge command, and wherein a write operation is performed when the word line is floated,
- wherein no fixed voltage is applied to the sub word line when the word line floating signal is activated.
Dependencies are inferred from the claim text.