Program method of nonvolatile memory device
AssigneeHynix Semiconductor Inc.
InventorsByung Ryul Kim, Jun Seop Chung, Duck Ju Kim
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Abstract
According to an aspect of a program method of a nonvolatile memory device, a first program operation for programming a first data stored in a first latch may be performed and a cache program signal may be input for inputting a second data to be programmed subsequently. When the cache program signal is input, a determination is made as to whether a first program verify operation is being performed, and if so, the verify operation is stopped, the second data is input, and the first program verify operation is restarted.
Claims12
A program method of a nonvolatile memory device, comprising:
- performing a first program operation for programming a first data stored in a first latch;
- inputting a cache program signal for inputting a second data to be programmed subsequently, during the performance of a first program operation;
- determining whether a first program verify operation is being performed, when the cache program signal is input;
- stopping the first program verify operation and inputting the second data, if it is determined that the first program verify operation is being performed;
- and
- restarting the first program verify operation, after the inputting of the second data.
A program method of a nonvolatile memory device, comprising:
- performing a first verify program operation for programming a first data stored in a first latch;
- inputting a cache program signal for inputting a second data to be programmed subsequently, during the performance of the first program verify operation;
- stopping the first program verify operation, storing the second data in a second latch, and transferring the second data stored in the second latch to a third latch according to the cache program signal;
- resetting the second latch;
- and
- restarting and performing the first program verify operation.
Dependencies are inferred from the claim text.