Nonvolatile memory device and program method with improved pass voltage window

A program method for a memory device including a memory cell array comprising a plurality of memory cells arranged in relation to a plurality of word lines including a selected word line and a plurality of non-selected word lines, and a plurality of bit lines, a high voltage generator configured to generate a program voltage applied to the selected word line, a pass voltage applied to at least one of the non-selected word lines adjacent to the selected word line, and a local voltage applied during to at least one of the non-selected word lines in a local self-boosting scheme, and control logic configured to control operation of the memory cell array and the high voltage generator, wherein the program method comprises:

• generating the program voltage to be incrementally increasing;
• generating the pass voltage to be increasing in response to the increasing program voltage;
• and
• generating the local voltage to be decreasing in response to the increasing program voltage.

A computational system comprising a central processing unit (CPU) and a memory controller connected via a system bus, the memory controller being connected to and controlling the operation of a memory device,

• wherein the memory device comprises:
• a memory cell array comprising a plurality of memory cells arranged in relation to a plurality of word lines including a selected word line and a plurality of non-selected word lines, and a plurality of bit lines;
• a high voltage generator configured to generate a program voltage applied to the selected word line, a pass voltage applied to at least one of the non-selected word lines adjacent to the selected word line, and a local voltage applied to at least one of the non-selected word lines in a local self-boosting scheme;
• and
• control logic configured to control the generation of the program voltage, such that the program voltage is incrementally increased during a program operation, and further configured to control the generation of the pass voltage, such that the pass voltage is incrementally increased in response to the increasing program voltage, and still further configured to control the generation of the local voltage to decrease the local voltage in response to the program voltage.