Reduced programming pulse width for enhanced channel boosting in non-volatile storage

A non-volatile storage system, comprising:

• a set of NAND strings including a selected NAND string and an unselected NAND string, each NAND string comprising a plurality of storage elements, the set of NAND strings is in communication with a set of word lines which extends between a source side of the set of word lines and a drain side of the set of word lines;
• and
• one or more control circuits in communication with the set of word lines, the one or more control circuits perform a programming operation in which different subsets of storage elements in the set of storage elements are programmed to different respective states of four or more states, and during the programming operation, the one or more control circuits:
• (a) apply a first series of programming pulses to a selected word line of the set of word lines, (b) determine if a switching criterion is met, the switching criterion depends on a portion of the storage elements completing programming to one state of the four or more states, the one state is selected based on a temperature, and (b) if the switching criterion is met, switch from applying the first series of programming pulses to apply a second series of programming pulses to the selected word line, at least one programming pulse in the second series has a shorter duration than at least one programming pulse in the first series.